JPS5050878A - - Google Patents
Info
- Publication number
- JPS5050878A JPS5050878A JP48099215A JP9921573A JPS5050878A JP S5050878 A JPS5050878 A JP S5050878A JP 48099215 A JP48099215 A JP 48099215A JP 9921573 A JP9921573 A JP 9921573A JP S5050878 A JPS5050878 A JP S5050878A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
- H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48099215A JPS5050878A (ja) | 1973-09-05 | 1973-09-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48099215A JPS5050878A (ja) | 1973-09-05 | 1973-09-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5050878A true JPS5050878A (ja) | 1975-05-07 |
Family
ID=14241418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48099215A Pending JPS5050878A (ja) | 1973-09-05 | 1973-09-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5050878A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61185973A (ja) * | 1985-02-13 | 1986-08-19 | Nec Corp | 半導体装置 |
| JPS62163373A (ja) * | 1986-01-14 | 1987-07-20 | Nippon Texas Instr Kk | 絶縁ゲート型電界効果半導体装置の製造方法 |
| WO2003032398A3 (en) * | 2001-10-09 | 2003-07-03 | Sceptre Electronics Ltd | Field effect transistor having periodically doped channel |
-
1973
- 1973-09-05 JP JP48099215A patent/JPS5050878A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61185973A (ja) * | 1985-02-13 | 1986-08-19 | Nec Corp | 半導体装置 |
| JPS62163373A (ja) * | 1986-01-14 | 1987-07-20 | Nippon Texas Instr Kk | 絶縁ゲート型電界効果半導体装置の製造方法 |
| WO2003032398A3 (en) * | 2001-10-09 | 2003-07-03 | Sceptre Electronics Ltd | Field effect transistor having periodically doped channel |