JPS5047575A - - Google Patents
Info
- Publication number
- JPS5047575A JPS5047575A JP9800073A JP9800073A JPS5047575A JP S5047575 A JPS5047575 A JP S5047575A JP 9800073 A JP9800073 A JP 9800073A JP 9800073 A JP9800073 A JP 9800073A JP S5047575 A JPS5047575 A JP S5047575A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9800073A JPS5631752B2 (cg-RX-API-DMAC7.html) | 1973-08-31 | 1973-08-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9800073A JPS5631752B2 (cg-RX-API-DMAC7.html) | 1973-08-31 | 1973-08-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5047575A true JPS5047575A (cg-RX-API-DMAC7.html) | 1975-04-28 |
| JPS5631752B2 JPS5631752B2 (cg-RX-API-DMAC7.html) | 1981-07-23 |
Family
ID=14207379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9800073A Expired JPS5631752B2 (cg-RX-API-DMAC7.html) | 1973-08-31 | 1973-08-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5631752B2 (cg-RX-API-DMAC7.html) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55157270A (en) * | 1979-05-25 | 1980-12-06 | Sanyo Electric Co Ltd | Junction type electric effect semiconductor device |
| JPS5643769A (en) * | 1979-09-18 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Semiconductor ic circuit device and method of producing the same |
| JPS57106174A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Field-effect transistor |
| JPS5848469A (ja) * | 1981-09-17 | 1983-03-22 | Nec Corp | 電界効果トランジスタ |
| JP2013501362A (ja) * | 2009-08-04 | 2013-01-10 | ジーエーエヌ システムズ インコーポレイテッド | アイランドマトリックス化窒化ガリウムマイクロ波トランジスタおよびパワースイッチングトランジスタ |
| US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
-
1973
- 1973-08-31 JP JP9800073A patent/JPS5631752B2/ja not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55157270A (en) * | 1979-05-25 | 1980-12-06 | Sanyo Electric Co Ltd | Junction type electric effect semiconductor device |
| JPS5643769A (en) * | 1979-09-18 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Semiconductor ic circuit device and method of producing the same |
| JPS57106174A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Field-effect transistor |
| JPS5848469A (ja) * | 1981-09-17 | 1983-03-22 | Nec Corp | 電界効果トランジスタ |
| JP2013501362A (ja) * | 2009-08-04 | 2013-01-10 | ジーエーエヌ システムズ インコーポレイテッド | アイランドマトリックス化窒化ガリウムマイクロ波トランジスタおよびパワースイッチングトランジスタ |
| US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5631752B2 (cg-RX-API-DMAC7.html) | 1981-07-23 |