JPS5046454A - - Google Patents

Info

Publication number
JPS5046454A
JPS5046454A JP49090193A JP9019374A JPS5046454A JP S5046454 A JPS5046454 A JP S5046454A JP 49090193 A JP49090193 A JP 49090193A JP 9019374 A JP9019374 A JP 9019374A JP S5046454 A JPS5046454 A JP S5046454A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49090193A
Other versions
JPS5719515B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732339735 external-priority patent/DE2339735C3/de
Priority claimed from DE19732341104 external-priority patent/DE2341104A1/de
Priority claimed from DE19732358475 external-priority patent/DE2358475B2/de
Priority claimed from DE19732360897 external-priority patent/DE2360897B2/de
Application filed filed Critical
Publication of JPS5046454A publication Critical patent/JPS5046454A/ja
Publication of JPS5719515B2 publication Critical patent/JPS5719515B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
JP9019374A 1973-08-06 1974-08-06 Expired JPS5719515B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19732339735 DE2339735C3 (de) 1973-08-06 Statisches Speicherelement mit einem Speicher-Flipflop
DE19732341104 DE2341104A1 (de) 1973-08-14 1973-08-14 Statisches speicherelement mit einem speicher-flipflop
DE19732358475 DE2358475B2 (de) 1973-11-23 1973-11-23 Komplementaer-speicherelement
DE19732360897 DE2360897B2 (de) 1973-12-06 1973-12-06 Statisches mos-speicherelement

Publications (2)

Publication Number Publication Date
JPS5046454A true JPS5046454A (ja) 1975-04-25
JPS5719515B2 JPS5719515B2 (ja) 1982-04-22

Family

ID=27431723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9019374A Expired JPS5719515B2 (ja) 1973-08-06 1974-08-06

Country Status (5)

Country Link
JP (1) JPS5719515B2 (ja)
FR (1) FR2240500B1 (ja)
GB (1) GB1478035A (ja)
IT (1) IT1017853B (ja)
LU (1) LU70670A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5477542A (en) * 1977-12-02 1979-06-21 Mitsubishi Electric Corp Memory cell circuit
JPS55108992A (en) * 1979-02-15 1980-08-21 Nec Corp Semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5477542A (en) * 1977-12-02 1979-06-21 Mitsubishi Electric Corp Memory cell circuit
JPS5840278B2 (ja) * 1977-12-02 1983-09-05 三菱電機株式会社 メモリセル回路
JPS55108992A (en) * 1979-02-15 1980-08-21 Nec Corp Semiconductor memory device
JPS6151358B2 (ja) * 1979-02-15 1986-11-08 Nippon Electric Co

Also Published As

Publication number Publication date
LU70670A1 (ja) 1974-12-10
FR2240500A1 (ja) 1975-03-07
FR2240500B1 (ja) 1981-10-09
GB1478035A (en) 1977-06-29
JPS5719515B2 (ja) 1982-04-22
IT1017853B (it) 1977-08-10

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