JPS5040987B1 - - Google Patents

Info

Publication number
JPS5040987B1
JPS5040987B1 JP46034185A JP3418571A JPS5040987B1 JP S5040987 B1 JPS5040987 B1 JP S5040987B1 JP 46034185 A JP46034185 A JP 46034185A JP 3418571 A JP3418571 A JP 3418571A JP S5040987 B1 JPS5040987 B1 JP S5040987B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46034185A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5040987B1 publication Critical patent/JPS5040987B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP46034185A 1970-06-10 1971-05-21 Pending JPS5040987B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4514370A 1970-06-10 1970-06-10

Publications (1)

Publication Number Publication Date
JPS5040987B1 true JPS5040987B1 (ja) 1975-12-27

Family

ID=21936220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46034185A Pending JPS5040987B1 (ja) 1970-06-10 1971-05-21

Country Status (5)

Country Link
US (1) US3648124A (ja)
JP (1) JPS5040987B1 (ja)
DE (1) DE2124175A1 (ja)
FR (1) FR2094155B1 (ja)
GB (1) GB1297464A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63135048U (ja) * 1987-02-27 1988-09-05

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010014974A2 (en) * 2008-08-01 2010-02-04 President And Fellows Of Harvard College Phase transition devices and smart capacitive devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE408194A (ja) * 1934-03-02
US2940941A (en) * 1953-05-26 1960-06-14 R daltqn
DE1789084B2 (de) * 1961-08-17 1973-05-30 Rca Corp., New York, N.Y. (V.St.A.) Duennschicht-verknuepfungsglied und verfahren zu seiner herstellung
NL298324A (ja) * 1962-09-28 1900-01-01
NL301882A (ja) * 1962-12-17
GB1054176A (ja) * 1964-05-29
DE1277374B (de) * 1964-09-30 1968-09-12 Hitachi Ltd Mechanisch-elektrischer Wandler
US3483110A (en) * 1967-05-19 1969-12-09 Bell Telephone Labor Inc Preparation of thin films of vanadium dioxide
US3543104A (en) * 1968-02-14 1970-11-24 Hitachi Ltd Solid-state switching device including metal-semiconductor phase transition element and method for controlling same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63135048U (ja) * 1987-02-27 1988-09-05

Also Published As

Publication number Publication date
GB1297464A (ja) 1972-11-22
US3648124A (en) 1972-03-07
FR2094155A1 (ja) 1972-02-04
DE2124175A1 (de) 1971-12-23
FR2094155B1 (ja) 1977-01-28

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