JPS5040080A - - Google Patents

Info

Publication number
JPS5040080A
JPS5040080A JP49079723A JP7972374A JPS5040080A JP S5040080 A JPS5040080 A JP S5040080A JP 49079723 A JP49079723 A JP 49079723A JP 7972374 A JP7972374 A JP 7972374A JP S5040080 A JPS5040080 A JP S5040080A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49079723A
Other versions
JPS56946B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5040080A publication Critical patent/JPS5040080A/ja
Publication of JPS56946B2 publication Critical patent/JPS56946B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10W74/131
    • H10W72/073
    • H10W72/07336

Landscapes

  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7972374A 1973-07-16 1974-07-11 Expired JPS56946B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732336160 DE2336160A1 (de) 1973-07-16 1973-07-16 Verfahren zum herstellen von leistungsdioden

Publications (2)

Publication Number Publication Date
JPS5040080A true JPS5040080A (ja) 1975-04-12
JPS56946B2 JPS56946B2 (ja) 1981-01-10

Family

ID=5887099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7972374A Expired JPS56946B2 (ja) 1973-07-16 1974-07-11

Country Status (2)

Country Link
JP (1) JPS56946B2 (ja)
DE (1) DE2336160A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106067419A (zh) * 2016-08-22 2016-11-02 成都众乐泰科技有限公司 一种二极管的优化生产工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5027355A (ja) * 1973-07-12 1975-03-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5027355A (ja) * 1973-07-12 1975-03-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106067419A (zh) * 2016-08-22 2016-11-02 成都众乐泰科技有限公司 一种二极管的优化生产工艺

Also Published As

Publication number Publication date
JPS56946B2 (ja) 1981-01-10
DE2336160A1 (de) 1975-02-06

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