JPS5039105Y1 - - Google Patents

Info

Publication number
JPS5039105Y1
JPS5039105Y1 JP3138169U JP3138169U JPS5039105Y1 JP S5039105 Y1 JPS5039105 Y1 JP S5039105Y1 JP 3138169 U JP3138169 U JP 3138169U JP 3138169 U JP3138169 U JP 3138169U JP S5039105 Y1 JPS5039105 Y1 JP S5039105Y1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3138169U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3138169U priority Critical patent/JPS5039105Y1/ja
Publication of JPS5039105Y1 publication Critical patent/JPS5039105Y1/ja
Expired legal-status Critical Current

Links

JP3138169U 1969-04-08 1969-04-08 Expired JPS5039105Y1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3138169U JPS5039105Y1 (de) 1969-04-08 1969-04-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3138169U JPS5039105Y1 (de) 1969-04-08 1969-04-08

Publications (1)

Publication Number Publication Date
JPS5039105Y1 true JPS5039105Y1 (de) 1975-11-11

Family

ID=33051478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3138169U Expired JPS5039105Y1 (de) 1969-04-08 1969-04-08

Country Status (1)

Country Link
JP (1) JPS5039105Y1 (de)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434019A (en) * 1963-10-24 1969-03-18 Rca Corp High frequency high power transistor having overlay electrode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434019A (en) * 1963-10-24 1969-03-18 Rca Corp High frequency high power transistor having overlay electrode

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