JPS5036357B1 - - Google Patents

Info

Publication number
JPS5036357B1
JPS5036357B1 JP47012318A JP1231872A JPS5036357B1 JP S5036357 B1 JPS5036357 B1 JP S5036357B1 JP 47012318 A JP47012318 A JP 47012318A JP 1231872 A JP1231872 A JP 1231872A JP S5036357 B1 JPS5036357 B1 JP S5036357B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47012318A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5036357B1 publication Critical patent/JPS5036357B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/08—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Manufacturing Optical Record Carriers (AREA)
JP47012318A 1971-05-04 1972-02-04 Pending JPS5036357B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14008671A 1971-05-04 1971-05-04

Publications (1)

Publication Number Publication Date
JPS5036357B1 true JPS5036357B1 (ja) 1975-11-22

Family

ID=22489684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47012318A Pending JPS5036357B1 (ja) 1971-05-04 1972-02-04

Country Status (5)

Country Link
US (1) US3716406A (ja)
JP (1) JPS5036357B1 (ja)
DE (1) DE2203735A1 (ja)
FR (1) FR2135121B1 (ja)
GB (1) GB1338337A (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3928671A (en) * 1973-11-12 1975-12-23 Hughes Aircraft Co Process for fabricating a solid state, thin film field sustained conductivity device
US4149907A (en) * 1977-07-07 1979-04-17 Rca Corporation Method of making camera tube target by modifying Schottky barrier heights
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
USRE31968E (en) * 1980-12-31 1985-08-13 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4612208A (en) * 1985-04-22 1986-09-16 Westinghouse Electric Corp. Coupling aid for laser fusion of metal powders
US4799773A (en) * 1987-08-27 1989-01-24 Hughes Aircraft Company Liquid crystal light valve and associated bonding structure
US5101109A (en) * 1990-10-15 1992-03-31 Kansas State University Research Foundation Persistent photoconductivity quenching effect crystals and electrical apparatus using same

Also Published As

Publication number Publication date
FR2135121B1 (ja) 1977-01-14
US3716406A (en) 1973-02-13
GB1338337A (en) 1973-11-21
DE2203735A1 (de) 1972-11-23
FR2135121A1 (ja) 1972-12-15

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