Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
  • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
  • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
  • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
• • H10P95/00—

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Semiconductor Integrated Circuits (AREA)
• Solid State Image Pick-Up Elements (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Pulse Circuits (AREA)
• Networks Using Active Elements (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=5882438

Family Applications (1)

Country Status (4)

• 1973
  • 1973-05-29 DE DE2327284A patent/DE2327284C3/de not_active Expired
• 1974
  • 1974-05-16 IT IT22804/74A patent/IT1012433B/it active
  • 1974-05-24 NL NL7406976A patent/NL7406976A/xx not_active Application Discontinuation
  • 1974-05-29 JP JP49059856A patent/JPS583390B2/ja not_active Expired

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