JPS5033623A - - Google Patents

Info

Publication number
JPS5033623A
JPS5033623A JP48085079A JP8507973A JPS5033623A JP S5033623 A JPS5033623 A JP S5033623A JP 48085079 A JP48085079 A JP 48085079A JP 8507973 A JP8507973 A JP 8507973A JP S5033623 A JPS5033623 A JP S5033623A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48085079A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48085079A priority Critical patent/JPS5033623A/ja
Publication of JPS5033623A publication Critical patent/JPS5033623A/ja
Pending legal-status Critical Current

Links

JP48085079A 1973-07-28 1973-07-28 Pending JPS5033623A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48085079A JPS5033623A (ja) 1973-07-28 1973-07-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48085079A JPS5033623A (ja) 1973-07-28 1973-07-28

Publications (1)

Publication Number Publication Date
JPS5033623A true JPS5033623A (ja) 1975-03-31

Family

ID=13848598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48085079A Pending JPS5033623A (ja) 1973-07-28 1973-07-28

Country Status (1)

Country Link
JP (1) JPS5033623A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7408803B2 (en) 2001-02-16 2008-08-05 Infineon Technologies Ag Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7408803B2 (en) 2001-02-16 2008-08-05 Infineon Technologies Ag Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method

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