JPS5032022A - - Google Patents

Info

Publication number
JPS5032022A
JPS5032022A JP8348673A JP8348673A JPS5032022A JP S5032022 A JPS5032022 A JP S5032022A JP 8348673 A JP8348673 A JP 8348673A JP 8348673 A JP8348673 A JP 8348673A JP S5032022 A JPS5032022 A JP S5032022A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8348673A
Other languages
Japanese (ja)
Other versions
JPS532129B2 (cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8348673A priority Critical patent/JPS532129B2/ja
Publication of JPS5032022A publication Critical patent/JPS5032022A/ja
Publication of JPS532129B2 publication Critical patent/JPS532129B2/ja
Expired legal-status Critical Current

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  • Conductive Materials (AREA)
JP8348673A 1973-07-23 1973-07-23 Expired JPS532129B2 (cs)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8348673A JPS532129B2 (cs) 1973-07-23 1973-07-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8348673A JPS532129B2 (cs) 1973-07-23 1973-07-23

Publications (2)

Publication Number Publication Date
JPS5032022A true JPS5032022A (cs) 1975-03-28
JPS532129B2 JPS532129B2 (cs) 1978-01-25

Family

ID=13803794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8348673A Expired JPS532129B2 (cs) 1973-07-23 1973-07-23

Country Status (1)

Country Link
JP (1) JPS532129B2 (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617063A (en) * 1979-07-20 1981-02-18 Mitsubishi Electric Corp Manufacture of semiconductor device
US4590666A (en) * 1981-09-28 1986-05-27 Fujitsu Limited Method for producing a bipolar transistor having a reduced base region

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617063A (en) * 1979-07-20 1981-02-18 Mitsubishi Electric Corp Manufacture of semiconductor device
US4590666A (en) * 1981-09-28 1986-05-27 Fujitsu Limited Method for producing a bipolar transistor having a reduced base region

Also Published As

Publication number Publication date
JPS532129B2 (cs) 1978-01-25

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