JPS502871A - - Google Patents
Info
- Publication number
- JPS502871A JPS502871A JP5114773A JP5114773A JPS502871A JP S502871 A JPS502871 A JP S502871A JP 5114773 A JP5114773 A JP 5114773A JP 5114773 A JP5114773 A JP 5114773A JP S502871 A JPS502871 A JP S502871A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5114773A JPS502871A (ja) | 1973-05-10 | 1973-05-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5114773A JPS502871A (ja) | 1973-05-10 | 1973-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS502871A true JPS502871A (ja) | 1975-01-13 |
Family
ID=12878697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5114773A Pending JPS502871A (ja) | 1973-05-10 | 1973-05-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS502871A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51133335U (ja) * | 1975-04-16 | 1976-10-27 | ||
| JPS5370678A (en) * | 1976-12-06 | 1978-06-23 | Agency Of Ind Science & Technol | Production of sos semiconductor device |
| JPS53147470A (en) * | 1977-05-27 | 1978-12-22 | Nippon Telegr & Teleph Corp <Ntt> | Mos type field effect transistor and production of the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3470390A (en) * | 1968-02-02 | 1969-09-30 | Westinghouse Electric Corp | Integrated back-to-back diodes to prevent breakdown of mis gate dielectric |
-
1973
- 1973-05-10 JP JP5114773A patent/JPS502871A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3470390A (en) * | 1968-02-02 | 1969-09-30 | Westinghouse Electric Corp | Integrated back-to-back diodes to prevent breakdown of mis gate dielectric |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51133335U (ja) * | 1975-04-16 | 1976-10-27 | ||
| JPS5440445Y2 (ja) * | 1975-04-16 | 1979-11-28 | ||
| JPS5370678A (en) * | 1976-12-06 | 1978-06-23 | Agency Of Ind Science & Technol | Production of sos semiconductor device |
| JPS53147470A (en) * | 1977-05-27 | 1978-12-22 | Nippon Telegr & Teleph Corp <Ntt> | Mos type field effect transistor and production of the same |
| JPS5744024B2 (ja) * | 1977-05-27 | 1982-09-18 |