JPS5026920B1 - - Google Patents

Info

Publication number
JPS5026920B1
JPS5026920B1 JP47006684A JP668472A JPS5026920B1 JP S5026920 B1 JPS5026920 B1 JP S5026920B1 JP 47006684 A JP47006684 A JP 47006684A JP 668472 A JP668472 A JP 668472A JP S5026920 B1 JPS5026920 B1 JP S5026920B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47006684A
Other versions
JPS4716082A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4716082A publication Critical patent/JPS4716082A/ja
Publication of JPS5026920B1 publication Critical patent/JPS5026920B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Bipolar Transistors (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP47006684A 1971-01-26 1972-01-18 Pending JPS5026920B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10984571A 1971-01-26 1971-01-26

Publications (2)

Publication Number Publication Date
JPS4716082A JPS4716082A (ja) 1972-08-29
JPS5026920B1 true JPS5026920B1 (ja) 1975-09-04

Family

ID=22329879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47006684A Pending JPS5026920B1 (ja) 1971-01-26 1972-01-18

Country Status (5)

Country Link
US (1) US3663869A (ja)
JP (1) JPS5026920B1 (ja)
CA (1) CA927012A (ja)
DE (1) DE2203007A1 (ja)
GB (1) GB1365690A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50137478A (ja) * 1974-04-18 1975-10-31
JPS5712303B2 (ja) * 1974-05-09 1982-03-10
US4200878A (en) * 1978-06-12 1980-04-29 Rca Corporation Method of fabricating a narrow base-width bipolar device and the product thereof
JPS5850030B2 (ja) 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4244001A (en) * 1979-09-28 1981-01-06 Rca Corporation Fabrication of an integrated injection logic device with narrow basewidth
DE3044341C2 (de) * 1980-11-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Fototransistor
HU183760B (en) * 1981-12-23 1984-05-28 Mta Koezponti Fiz Kutato Intez Method and arrangement for shaping semiconductor tetrode
GB2164790A (en) * 1984-09-19 1986-03-26 Philips Electronic Associated Merged bipolar and field effect transistors
US5850242A (en) * 1995-03-07 1998-12-15 Canon Kabushiki Kaisha Recording head and recording apparatus and method of manufacturing same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2976426A (en) * 1953-08-03 1961-03-21 Rca Corp Self-powered semiconductive device
US2980831A (en) * 1957-11-21 1961-04-18 Sprague Electric Co Means for reducing surface recombination
US3096442A (en) * 1959-01-02 1963-07-02 Texas Instruments Inc Light sensitive solid state relay device
SE219804C1 (ja) * 1963-07-01 1956-04-02
US3436548A (en) * 1964-06-29 1969-04-01 Texas Instruments Inc Combination p-n junction light emitter and photocell having electrostatic shielding

Also Published As

Publication number Publication date
GB1365690A (en) 1974-09-04
DE2203007A1 (de) 1972-08-10
CA927012A (en) 1973-05-22
JPS4716082A (ja) 1972-08-29
US3663869A (en) 1972-05-16

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