JPS5026342B1 - - Google Patents

Info

Publication number
JPS5026342B1
JPS5026342B1 JP45079398A JP7939870A JPS5026342B1 JP S5026342 B1 JPS5026342 B1 JP S5026342B1 JP 45079398 A JP45079398 A JP 45079398A JP 7939870 A JP7939870 A JP 7939870A JP S5026342 B1 JPS5026342 B1 JP S5026342B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45079398A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5026342B1 publication Critical patent/JPS5026342B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/06—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
    • G11C11/06007—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)
JP45079398A 1969-10-01 1970-09-11 Pending JPS5026342B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86270369A 1969-10-01 1969-10-01

Publications (1)

Publication Number Publication Date
JPS5026342B1 true JPS5026342B1 (ja) 1975-08-30

Family

ID=25339097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45079398A Pending JPS5026342B1 (ja) 1969-10-01 1970-09-11

Country Status (5)

Country Link
US (1) US3671772A (ja)
JP (1) JPS5026342B1 (ja)
DE (1) DE2048241A1 (ja)
FR (1) FR2065893A5 (ja)
GB (1) GB1315325A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395706U (ja) * 1976-12-30 1978-08-04
JPS5599158U (ja) * 1978-12-28 1980-07-10

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
US3824564A (en) * 1973-07-19 1974-07-16 Sperry Rand Corp Integrated threshold mnos memory with decoder and operating sequence
US3953839A (en) * 1975-04-10 1976-04-27 International Business Machines Corporation Bit circuitry for enhance-deplete ram
DE2739283A1 (de) * 1977-08-31 1979-03-15 Siemens Ag Integrierbare halbleiterspeicherzelle
US4547685A (en) * 1983-10-21 1985-10-15 Advanced Micro Devices, Inc. Sense amplifier circuit for semiconductor memories
US4922455A (en) * 1987-09-08 1990-05-01 International Business Machines Corporation Memory cell with active device for saturation capacitance discharge prior to writing
US4816706A (en) * 1987-09-10 1989-03-28 International Business Machines Corporation Sense amplifier with improved bitline precharging for dynamic random access memory
US5878269A (en) * 1992-03-27 1999-03-02 National Semiconductor Corporation High speed processor for operation at reduced operating voltage

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2866105A (en) * 1955-10-04 1958-12-23 Sperry Rand Corp Transistor logical device
US2920215A (en) * 1956-10-31 1960-01-05 Rca Corp Switching circuit
US3226574A (en) * 1963-09-20 1965-12-28 Martin Marietta Corp Power saving storage circuit employing controllable power source
US3309534A (en) * 1964-07-22 1967-03-14 Edwin K C Yu Bistable flip-flop employing insulated gate field effect transistors
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3560764A (en) * 1967-05-25 1971-02-02 Ibm Pulse-powered data storage cell
US3564300A (en) * 1968-03-06 1971-02-16 Ibm Pulse power data storage cell

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSTACTIONS ON ELECTRONIC COMPUTERS#N3=1966 *
INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE=1964 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395706U (ja) * 1976-12-30 1978-08-04
JPS5599158U (ja) * 1978-12-28 1980-07-10

Also Published As

Publication number Publication date
DE2048241A1 (de) 1971-04-08
FR2065893A5 (ja) 1971-08-06
GB1315325A (en) 1973-05-02
US3671772A (en) 1972-06-20

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