JPS502481A - - Google Patents

Info

Publication number
JPS502481A
JPS502481A JP5028573A JP5028573A JPS502481A JP S502481 A JPS502481 A JP S502481A JP 5028573 A JP5028573 A JP 5028573A JP 5028573 A JP5028573 A JP 5028573A JP S502481 A JPS502481 A JP S502481A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5028573A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5028573A priority Critical patent/JPS502481A/ja
Publication of JPS502481A publication Critical patent/JPS502481A/ja
Pending legal-status Critical Current

Links

JP5028573A 1973-05-08 1973-05-08 Pending JPS502481A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5028573A JPS502481A (ja) 1973-05-08 1973-05-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5028573A JPS502481A (ja) 1973-05-08 1973-05-08

Publications (1)

Publication Number Publication Date
JPS502481A true JPS502481A (ja) 1975-01-11

Family

ID=12854637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5028573A Pending JPS502481A (ja) 1973-05-08 1973-05-08

Country Status (1)

Country Link
JP (1) JPS502481A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5225583A (en) * 1975-08-21 1977-02-25 Nec Corp Field effect transistor
JPS54114186A (en) * 1978-02-27 1979-09-06 Fujitsu Ltd Semiconductor integrated circuit device and its manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5225583A (en) * 1975-08-21 1977-02-25 Nec Corp Field effect transistor
JPS54114186A (en) * 1978-02-27 1979-09-06 Fujitsu Ltd Semiconductor integrated circuit device and its manufacture

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