JPS5023775B1 - - Google Patents
Info
- Publication number
- JPS5023775B1 JPS5023775B1 JP45045737A JP4573770A JPS5023775B1 JP S5023775 B1 JPS5023775 B1 JP S5023775B1 JP 45045737 A JP45045737 A JP 45045737A JP 4573770 A JP4573770 A JP 4573770A JP S5023775 B1 JPS5023775 B1 JP S5023775B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US84017269A | 1969-07-09 | 1969-07-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5023775B1 true JPS5023775B1 (ja) | 1975-08-11 |
Family
ID=25281626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP45045737A Pending JPS5023775B1 (ja) | 1969-07-09 | 1970-05-29 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3617772A (ja) |
| JP (1) | JPS5023775B1 (ja) |
| CA (1) | CA936596A (ja) |
| FR (1) | FR2063126B1 (ja) |
| GB (1) | GB1280924A (ja) |
| SE (1) | SE365638B (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3703709A (en) * | 1969-05-24 | 1972-11-21 | Nippon Electric Co | High speed associative memory circuits |
| US3736573A (en) * | 1971-11-11 | 1973-05-29 | Ibm | Resistor sensing bit switch |
| US3732440A (en) * | 1971-12-23 | 1973-05-08 | Ibm | Address decoder latch |
| US3747076A (en) * | 1972-01-03 | 1973-07-17 | Honeywell Inf Systems | Memory write circuit |
| US4057789A (en) * | 1974-06-19 | 1977-11-08 | International Business Machines Corporation | Reference voltage source for memory cells |
| US4311925A (en) * | 1979-09-17 | 1982-01-19 | International Business Machines Corporation | Current switch emitter follower latch having output signals with reduced noise |
| US4570090A (en) * | 1983-06-30 | 1986-02-11 | International Business Machines Corporation | High-speed sense amplifier circuit with inhibit capability |
| US4613958A (en) * | 1984-06-28 | 1986-09-23 | International Business Machines Corporation | Gate array chip |
| EP0169940A1 (de) * | 1984-07-27 | 1986-02-05 | Siemens Aktiengesellschaft | Bildsteuereinheit für ein Datensichtgerät |
| US4651302A (en) * | 1984-11-23 | 1987-03-17 | International Business Machines Corporation | Read only memory including an isolation network connected between the array of memory cells and the output sense amplifier whereby reading speed is enhanced |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2816237A (en) * | 1955-05-31 | 1957-12-10 | Hughes Aircraft Co | System for coupling signals into and out of flip-flops |
| US3177374A (en) * | 1961-03-10 | 1965-04-06 | Philco Corp | Binary data transfer circuit |
| US3364362A (en) * | 1963-10-07 | 1968-01-16 | Bunker Ramo | Memory selection system |
-
1969
- 1969-07-09 US US840172A patent/US3617772A/en not_active Expired - Lifetime
-
1970
- 1970-05-29 JP JP45045737A patent/JPS5023775B1/ja active Pending
- 1970-06-01 GB GB26254/70A patent/GB1280924A/en not_active Expired
- 1970-06-02 FR FR7020078A patent/FR2063126B1/fr not_active Expired
- 1970-06-29 CA CA086706A patent/CA936596A/en not_active Expired
- 1970-07-09 SE SE09551/70A patent/SE365638B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2024451B2 (de) | 1972-11-02 |
| DE2024451A1 (de) | 1971-01-14 |
| US3617772A (en) | 1971-11-02 |
| SE365638B (ja) | 1974-03-25 |
| CA936596A (en) | 1973-11-06 |
| GB1280924A (en) | 1972-07-12 |
| FR2063126A1 (ja) | 1971-07-09 |
| FR2063126B1 (ja) | 1974-03-15 |