JPS5021212B1 - - Google Patents

Info

Publication number
JPS5021212B1
JPS5021212B1 JP45024357A JP2435770A JPS5021212B1 JP S5021212 B1 JPS5021212 B1 JP S5021212B1 JP 45024357 A JP45024357 A JP 45024357A JP 2435770 A JP2435770 A JP 2435770A JP S5021212 B1 JPS5021212 B1 JP S5021212B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45024357A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5021212B1 publication Critical patent/JPS5021212B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
JP45024357A 1969-03-24 1970-03-24 Pending JPS5021212B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6908560A FR2036530A5 (ja) 1969-03-24 1969-03-24

Publications (1)

Publication Number Publication Date
JPS5021212B1 true JPS5021212B1 (ja) 1975-07-21

Family

ID=9031153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45024357A Pending JPS5021212B1 (ja) 1969-03-24 1970-03-24

Country Status (8)

Country Link
US (1) US3654498A (ja)
JP (1) JPS5021212B1 (ja)
BE (1) BE747834A (ja)
DE (1) DE2009358C3 (ja)
FR (1) FR2036530A5 (ja)
GB (1) GB1311966A (ja)
NL (1) NL7003899A (ja)
SE (1) SE357288B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS521877B2 (ja) * 1972-09-25 1977-01-18
JPS51135383A (en) * 1975-05-20 1976-11-24 Sony Corp Semiconductor variable capacitance device
US4001869A (en) * 1975-06-09 1977-01-04 Sprague Electric Company Mos-capacitor for integrated circuits
US4191899A (en) * 1977-06-29 1980-03-04 International Business Machines Corporation Voltage variable integrated circuit capacitor and bootstrap driver circuit
US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
US5680073A (en) * 1993-06-08 1997-10-21 Ramot University Authority For Applied Research & Industrial Development Ltd. Controlled semiconductor capacitors
US6100153A (en) * 1998-01-20 2000-08-08 International Business Machines Corporation Reliable diffusion resistor and diffusion capacitor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355669A (en) * 1964-09-14 1967-11-28 Rca Corp Fm detector system suitable for integration in a monolithic semiconductor body
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor

Also Published As

Publication number Publication date
SE357288B (ja) 1973-06-18
NL7003899A (ja) 1970-09-28
BE747834A (fr) 1970-09-23
DE2009358C3 (de) 1980-09-11
DE2009358A1 (de) 1970-10-08
DE2009358B2 (de) 1980-01-03
US3654498A (en) 1972-04-04
GB1311966A (en) 1973-03-28
FR2036530A5 (ja) 1970-12-24

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