JPS5021077B1 - - Google Patents

Info

Publication number
JPS5021077B1
JPS5021077B1 JP43011402A JP1140268A JPS5021077B1 JP S5021077 B1 JPS5021077 B1 JP S5021077B1 JP 43011402 A JP43011402 A JP 43011402A JP 1140268 A JP1140268 A JP 1140268A JP S5021077 B1 JPS5021077 B1 JP S5021077B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43011402A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL676703013A external-priority patent/NL153947B/xx
Application filed filed Critical
Publication of JPS5021077B1 publication Critical patent/JPS5021077B1/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • H10D84/403Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10P50/613

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Element Separation (AREA)
JP43011402A 1967-02-25 1968-02-24 Pending JPS5021077B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL676703013A NL153947B (nl) 1967-02-25 1967-02-25 Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.

Publications (1)

Publication Number Publication Date
JPS5021077B1 true JPS5021077B1 (OSRAM) 1975-07-19

Family

ID=19799394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43011402A Pending JPS5021077B1 (OSRAM) 1967-02-25 1968-02-24

Country Status (2)

Country Link
JP (1) JPS5021077B1 (OSRAM)
SE (1) SE331858B (OSRAM)

Also Published As

Publication number Publication date
SE331858B (OSRAM) 1971-01-18

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