JPS501673A - - Google Patents

Info

Publication number
JPS501673A
JPS501673A JP48129083A JP12908373A JPS501673A JP S501673 A JPS501673 A JP S501673A JP 48129083 A JP48129083 A JP 48129083A JP 12908373 A JP12908373 A JP 12908373A JP S501673 A JPS501673 A JP S501673A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48129083A
Other languages
Japanese (ja)
Inventor
J T Wallmark
M Bakowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASEA AB filed Critical ASEA AB
Publication of JPS501673A publication Critical patent/JPS501673A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP48129083A 1972-11-17 1973-11-16 Pending JPS501673A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7214937A SE375881B (OSRAM) 1972-11-17 1972-11-17

Publications (1)

Publication Number Publication Date
JPS501673A true JPS501673A (OSRAM) 1975-01-09

Family

ID=20299907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48129083A Pending JPS501673A (OSRAM) 1972-11-17 1973-11-16

Country Status (5)

Country Link
US (1) US3922709A (OSRAM)
JP (1) JPS501673A (OSRAM)
CA (1) CA992217A (OSRAM)
DE (1) DE2356674C2 (OSRAM)
SE (1) SE375881B (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2452289A1 (de) * 1974-11-04 1976-05-06 Siemens Ag Halbleiterbauelement
US4165516A (en) * 1975-04-28 1979-08-21 U.S. Philips Corporation Semiconductor device and method of manufacturing same
JPS54149469A (en) * 1978-05-16 1979-11-22 Toshiba Corp Semiconductor device
JPS5627935A (en) * 1979-08-15 1981-03-18 Toshiba Corp Semiconductor device
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung
CN108206219A (zh) * 2017-12-29 2018-06-26 中国振华集团永光电子有限公司(国营第八三七厂) 一种高可靠玻璃钝化表贴封装电压调整二极管及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL133278C (OSRAM) * 1960-04-30
US3320495A (en) * 1963-07-02 1967-05-16 Atomic Energy Commission Surface-barrier diode for detecting high energy particles and method for preparing same
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3601667A (en) * 1968-12-09 1971-08-24 Gen Electric A semiconductor device with a heat sink having a foot portion
US3597269A (en) * 1969-09-30 1971-08-03 Westinghouse Electric Corp Surfce stabilization of semiconductor power devices and article
CH520406A (de) * 1970-09-14 1972-03-15 Bbc Brown Boveri & Cie Thyristor
US3787251A (en) * 1972-04-24 1974-01-22 Signetics Corp Mos semiconductor structure with increased field threshold and method for making the same

Also Published As

Publication number Publication date
SE375881B (OSRAM) 1975-04-28
US3922709A (en) 1975-11-25
CA992217A (en) 1976-06-29
DE2356674C2 (de) 1983-11-03
DE2356674A1 (de) 1974-05-22

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