JPS50150379A - - Google Patents
Info
- Publication number
- JPS50150379A JPS50150379A JP5657574A JP5657574A JPS50150379A JP S50150379 A JPS50150379 A JP S50150379A JP 5657574 A JP5657574 A JP 5657574A JP 5657574 A JP5657574 A JP 5657574A JP S50150379 A JPS50150379 A JP S50150379A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5657574A JPS50150379A (en) | 1974-05-22 | 1974-05-22 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5657574A JPS50150379A (en) | 1974-05-22 | 1974-05-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50150379A true JPS50150379A (en) | 1975-12-02 |
Family
ID=13030936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5657574A Pending JPS50150379A (en) | 1974-05-22 | 1974-05-22 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS50150379A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5617074A (en) * | 1979-07-10 | 1981-02-18 | Thomson Csf | Field effect transistor and method of manufacturing same |
JPS5842274A (en) * | 1981-09-07 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate field effect transistor |
JPH025484A (en) * | 1988-06-23 | 1990-01-10 | Fuji Electric Co Ltd | Mos semiconductor device |
-
1974
- 1974-05-22 JP JP5657574A patent/JPS50150379A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5617074A (en) * | 1979-07-10 | 1981-02-18 | Thomson Csf | Field effect transistor and method of manufacturing same |
JPH0526352B2 (en) * | 1979-07-10 | 1993-04-15 | Thomson Csf | |
JPS5842274A (en) * | 1981-09-07 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate field effect transistor |
JPH025484A (en) * | 1988-06-23 | 1990-01-10 | Fuji Electric Co Ltd | Mos semiconductor device |