JPS50132865A - - Google Patents
Info
- Publication number
- JPS50132865A JPS50132865A JP49032574A JP3257474A JPS50132865A JP S50132865 A JPS50132865 A JP S50132865A JP 49032574 A JP49032574 A JP 49032574A JP 3257474 A JP3257474 A JP 3257474A JP S50132865 A JPS50132865 A JP S50132865A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
Landscapes
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3257474A JPS542066B2 (https=) | 1974-03-25 | 1974-03-25 | |
| US05/560,880 US3968019A (en) | 1974-03-25 | 1975-03-21 | Method of manufacturing low power loss semiconductor device |
| DE19752512951 DE2512951A1 (de) | 1974-03-25 | 1975-03-24 | Verfahren zur herstellung eines halbleiterbauelementes |
| NL7503480A NL7503480A (nl) | 1974-03-25 | 1975-03-24 | Werkwijze voor het vervaardigen van een half- geleider-inrichting met laag vermogensverlies. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3257474A JPS542066B2 (https=) | 1974-03-25 | 1974-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50132865A true JPS50132865A (https=) | 1975-10-21 |
| JPS542066B2 JPS542066B2 (https=) | 1979-02-01 |
Family
ID=12362650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3257474A Expired JPS542066B2 (https=) | 1974-03-25 | 1974-03-25 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3968019A (https=) |
| JP (1) | JPS542066B2 (https=) |
| DE (1) | DE2512951A1 (https=) |
| NL (1) | NL7503480A (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4039416A (en) * | 1975-04-21 | 1977-08-02 | White Gerald W | Gasless ion plating |
| US4066527A (en) * | 1975-07-18 | 1978-01-03 | Futaba Denshi Kogyo K. K. | Method of producing semiconductor device |
| JPS5458636A (en) * | 1977-10-20 | 1979-05-11 | Kawasaki Heavy Ind Ltd | Ion nitriding method |
| FR2413780A1 (fr) * | 1977-12-29 | 1979-07-27 | Thomson Csf | Procede de realisation d'un contact " metal-semi-conducteur " a barriere de potentiel de hauteur predeterminee, et composant semi-conducteur comportant au moins un contact obtenu par ce procede |
| US4135998A (en) * | 1978-04-26 | 1979-01-23 | International Business Machines Corp. | Method for forming pt-si schottky barrier contact |
| USRE30401E (en) * | 1978-07-07 | 1980-09-09 | Illinois Tool Works Inc. | Gasless ion plating |
| US4424104A (en) | 1983-05-12 | 1984-01-03 | International Business Machines Corporation | Single axis combined ion and vapor source |
| JP2515731B2 (ja) * | 1985-10-25 | 1996-07-10 | 株式会社日立製作所 | 薄膜形成装置および薄膜形成方法 |
| US4687537A (en) * | 1986-04-15 | 1987-08-18 | Rca Corporation | Epitaxial metal silicide layers |
| JPH07114218B2 (ja) * | 1991-01-09 | 1995-12-06 | 株式会社東芝 | 微小箇所の電気接続方法及び該方法により形成された半導体装置 |
| DE19943064B4 (de) * | 1999-09-09 | 2013-01-31 | Robert Bosch Gmbh | Verfahren zur epitaktischen Abscheidung von Atomen oder Molekülen aus einem Reaktivgas auf einer Abscheidungsoberfläche eines Substrats |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3451912A (en) * | 1966-07-15 | 1969-06-24 | Ibm | Schottky-barrier diode formed by sputter-deposition processes |
| US3832232A (en) * | 1970-03-13 | 1974-08-27 | Siemens Ag | Process for producing contact metal layers consisting of aluminum alloy on semiconductor components |
| US3855612A (en) * | 1972-01-03 | 1974-12-17 | Signetics Corp | Schottky barrier diode semiconductor structure and method |
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1974
- 1974-03-25 JP JP3257474A patent/JPS542066B2/ja not_active Expired
-
1975
- 1975-03-21 US US05/560,880 patent/US3968019A/en not_active Expired - Lifetime
- 1975-03-24 NL NL7503480A patent/NL7503480A/xx not_active Application Discontinuation
- 1975-03-24 DE DE19752512951 patent/DE2512951A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS542066B2 (https=) | 1979-02-01 |
| US3968019A (en) | 1976-07-06 |
| NL7503480A (nl) | 1975-09-29 |
| DE2512951A1 (de) | 1975-10-02 |