JPS50126188A - - Google Patents

Info

Publication number
JPS50126188A
JPS50126188A JP49031560A JP3156074A JPS50126188A JP S50126188 A JPS50126188 A JP S50126188A JP 49031560 A JP49031560 A JP 49031560A JP 3156074 A JP3156074 A JP 3156074A JP S50126188 A JPS50126188 A JP S50126188A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49031560A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP49031560A priority Critical patent/JPS50126188A/ja
Priority to DE19752512327 priority patent/DE2512327B2/en
Publication of JPS50126188A publication Critical patent/JPS50126188A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP49031560A 1974-03-22 1974-03-22 Pending JPS50126188A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP49031560A JPS50126188A (en) 1974-03-22 1974-03-22
DE19752512327 DE2512327B2 (en) 1974-03-22 1975-03-20 Photoelectric semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49031560A JPS50126188A (en) 1974-03-22 1974-03-22

Publications (1)

Publication Number Publication Date
JPS50126188A true JPS50126188A (en) 1975-10-03

Family

ID=12334546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49031560A Pending JPS50126188A (en) 1974-03-22 1974-03-22

Country Status (2)

Country Link
JP (1) JPS50126188A (en)
DE (1) DE2512327B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4243421A1 (en) * 1992-12-16 1993-07-29 Medium Sensor Gmbh Opto-electronic component for measuring limited region of ultraviolet radiation - contains fluorescent medium stimulated by ultraviolet, optical and filtering arrangement ensuring narrow spectral stimulation region
EP0625803B1 (en) * 1993-05-19 1998-10-28 Hewlett-Packard GmbH Photodiode structure
JP3658399B2 (en) * 2002-07-16 2005-06-08 キヤノン株式会社 Solid-state imaging device for AEAF and camera using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3081370A (en) * 1961-07-17 1963-03-12 Raytheon Co Solar cells

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3081370A (en) * 1961-07-17 1963-03-12 Raytheon Co Solar cells

Also Published As

Publication number Publication date
DE2512327B2 (en) 1979-04-19
DE2512327A1 (en) 1975-09-25

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