JPS50116186A - - Google Patents

Info

Publication number
JPS50116186A
JPS50116186A JP50017335A JP1733575A JPS50116186A JP S50116186 A JPS50116186 A JP S50116186A JP 50017335 A JP50017335 A JP 50017335A JP 1733575 A JP1733575 A JP 1733575A JP S50116186 A JPS50116186 A JP S50116186A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50017335A
Other languages
Japanese (ja)
Other versions
JPS5324311B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50116186A publication Critical patent/JPS50116186A/ja
Publication of JPS5324311B2 publication Critical patent/JPS5324311B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP1733575A 1974-02-11 1975-02-10 Expired JPS5324311B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44148274A 1974-02-11 1974-02-11

Publications (2)

Publication Number Publication Date
JPS50116186A true JPS50116186A (en) 1975-09-11
JPS5324311B2 JPS5324311B2 (en) 1978-07-20

Family

ID=23753033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1733575A Expired JPS5324311B2 (en) 1974-02-11 1975-02-10

Country Status (9)

Country Link
JP (1) JPS5324311B2 (en)
BE (1) BE825376A (en)
CA (1) CA1023058A (en)
DE (1) DE2504846A1 (en)
FR (1) FR2260873A1 (en)
GB (1) GB1452882A (en)
IN (1) IN144488B (en)
IT (1) IT1031592B (en)
SE (1) SE397605B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120971A (en) * 1974-03-09 1975-09-22
JPS5662374A (en) * 1979-10-18 1981-05-28 Philips Nv Zener diode

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3004681A1 (en) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode element for integrated circuit - achieves low noise and small differential impedance by using three specified zones
DE3004680A1 (en) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrated circuit with zener diode and transistor - has buried layers and diode region formed simultaneously with transistor collector
JPS56137072A (en) * 1980-03-29 1981-10-26 Aisin Seiki Energy saving molten metal retaining furnace
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
IT1214805B (en) * 1984-08-21 1990-01-18 Ates Componenti Elettron SEMICONDUCTOR WITH JUNPROCESS DEVICES FOR THE MANUFACTURE OF VARIABLE CHARGE CONCENTRATION PLANAR DIRECTIONS AND VERY HIGH BREAKDOWN VOLTAGE
JPH0194895U (en) * 1987-12-16 1989-06-22
JP3799714B2 (en) * 1997-02-17 2006-07-19 ソニー株式会社 Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735210A (en) * 1971-06-07 1973-05-22 Rca Corp Zener diode for monolithic integrated circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735210A (en) * 1971-06-07 1973-05-22 Rca Corp Zener diode for monolithic integrated circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120971A (en) * 1974-03-09 1975-09-22
JPS5662374A (en) * 1979-10-18 1981-05-28 Philips Nv Zener diode

Also Published As

Publication number Publication date
DE2504846A1 (en) 1975-08-28
BE825376A (en) 1975-05-29
JPS5324311B2 (en) 1978-07-20
CA1023058A (en) 1977-12-20
IN144488B (en) 1978-05-06
FR2260873A1 (en) 1975-09-05
AU7792275A (en) 1976-08-05
SE397605B (en) 1977-11-07
IT1031592B (en) 1979-05-10
GB1452882A (en) 1976-10-20
SE7501441L (en) 1975-08-12

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