JPS50115480A - - Google Patents

Info

Publication number
JPS50115480A
JPS50115480A JP49019492A JP1949274A JPS50115480A JP S50115480 A JPS50115480 A JP S50115480A JP 49019492 A JP49019492 A JP 49019492A JP 1949274 A JP1949274 A JP 1949274A JP S50115480 A JPS50115480 A JP S50115480A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49019492A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP49019492A priority Critical patent/JPS50115480A/ja
Publication of JPS50115480A publication Critical patent/JPS50115480A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Amplification And Gain Control (AREA)
JP49019492A 1974-02-20 1974-02-20 Pending JPS50115480A (fi)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49019492A JPS50115480A (fi) 1974-02-20 1974-02-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49019492A JPS50115480A (fi) 1974-02-20 1974-02-20

Publications (1)

Publication Number Publication Date
JPS50115480A true JPS50115480A (fi) 1975-09-10

Family

ID=12000849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49019492A Pending JPS50115480A (fi) 1974-02-20 1974-02-20

Country Status (1)

Country Link
JP (1) JPS50115480A (fi)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53134349A (en) * 1977-03-03 1978-11-22 Texas Instruments Deutschland Hf amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53134349A (en) * 1977-03-03 1978-11-22 Texas Instruments Deutschland Hf amplifier

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