JPS50114972A - - Google Patents
Info
- Publication number
- JPS50114972A JPS50114972A JP49018630A JP1863074A JPS50114972A JP S50114972 A JPS50114972 A JP S50114972A JP 49018630 A JP49018630 A JP 49018630A JP 1863074 A JP1863074 A JP 1863074A JP S50114972 A JPS50114972 A JP S50114972A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H10P50/646—
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- H10P14/263—
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- H10P14/265—
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- H10P14/2911—
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- H10P14/2925—
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- H10P14/3221—
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- H10P14/3421—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/084—Ion implantation of compound devices
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1863074A JPS5346594B2 (cg-RX-API-DMAC10.html) | 1974-02-18 | 1974-02-18 | |
| US05/550,769 US4073676A (en) | 1974-02-18 | 1975-02-18 | GaAs-GaAlAs semiconductor having a periodic corrugation at an interface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1863074A JPS5346594B2 (cg-RX-API-DMAC10.html) | 1974-02-18 | 1974-02-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50114972A true JPS50114972A (cg-RX-API-DMAC10.html) | 1975-09-09 |
| JPS5346594B2 JPS5346594B2 (cg-RX-API-DMAC10.html) | 1978-12-14 |
Family
ID=11976925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1863074A Expired JPS5346594B2 (cg-RX-API-DMAC10.html) | 1974-02-18 | 1974-02-18 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4073676A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5346594B2 (cg-RX-API-DMAC10.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4342148A (en) * | 1981-02-04 | 1982-08-03 | Northern Telecom Limited | Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy |
| US4569054A (en) * | 1983-06-17 | 1986-02-04 | Rca Corporation | Double heterostructure laser |
| US4547396A (en) * | 1983-06-17 | 1985-10-15 | Rca Corporation | Method of making a laser array |
| EP0147417A4 (en) * | 1983-06-17 | 1987-07-29 | Rca Corp | PHASE-COUPLED SEMICONDUCTOR LASER ARRAY ARRANGEMENT AND METHOD FOR THEIR PRODUCTION. |
| US4642143A (en) * | 1983-06-17 | 1987-02-10 | Rca Corporation | Method of making a double heterostructure laser |
| JPS607720A (ja) * | 1983-06-28 | 1985-01-16 | Nec Corp | エピタキシヤル成長方法 |
| US4575919A (en) * | 1984-05-24 | 1986-03-18 | At&T Bell Laboratories | Method of making heteroepitaxial ridge overgrown laser |
| US4902644A (en) * | 1986-03-28 | 1990-02-20 | American Telephone And Telegraph Company At&T Bell Laboratories | Preservation of surface features on semiconductor surfaces |
| US4805178A (en) * | 1986-03-28 | 1989-02-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Preservation of surface features on semiconductor surfaces |
| US4859628A (en) * | 1988-04-11 | 1989-08-22 | Northern Telecom Limited | Interrupted liquid phase epitaxy process |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3565702A (en) * | 1969-02-14 | 1971-02-23 | Rca Corp | Depositing successive epitaxial semiconductive layers from the liquid phase |
| US3741825A (en) * | 1971-07-08 | 1973-06-26 | Rca Corp | Method of depositing an epitaxial semiconductor layer from the liquidphase |
| US3933538A (en) * | 1972-01-18 | 1976-01-20 | Sumitomo Electric Industries, Ltd. | Method and apparatus for production of liquid phase epitaxial layers of semiconductors |
| BE795005A (fr) * | 1972-02-09 | 1973-05-29 | Rca Corp | Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu |
| CA1019827A (en) * | 1973-10-26 | 1977-10-25 | Tatsuro Beppu | Method of manufacturing a gallium phosphide light-emitting device |
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1974
- 1974-02-18 JP JP1863074A patent/JPS5346594B2/ja not_active Expired
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1975
- 1975-02-18 US US05/550,769 patent/US4073676A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5346594B2 (cg-RX-API-DMAC10.html) | 1978-12-14 |
| US4073676A (en) | 1978-02-14 |