JPS50110582A - - Google Patents

Info

Publication number
JPS50110582A
JPS50110582A JP1496774A JP1496774A JPS50110582A JP S50110582 A JPS50110582 A JP S50110582A JP 1496774 A JP1496774 A JP 1496774A JP 1496774 A JP1496774 A JP 1496774A JP S50110582 A JPS50110582 A JP S50110582A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1496774A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1496774A priority Critical patent/JPS50110582A/ja
Publication of JPS50110582A publication Critical patent/JPS50110582A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP1496774A 1974-02-07 1974-02-07 Pending JPS50110582A (US20100154141A1-20100624-C00001.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1496774A JPS50110582A (US20100154141A1-20100624-C00001.png) 1974-02-07 1974-02-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1496774A JPS50110582A (US20100154141A1-20100624-C00001.png) 1974-02-07 1974-02-07

Publications (1)

Publication Number Publication Date
JPS50110582A true JPS50110582A (US20100154141A1-20100624-C00001.png) 1975-08-30

Family

ID=11875733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1496774A Pending JPS50110582A (US20100154141A1-20100624-C00001.png) 1974-02-07 1974-02-07

Country Status (1)

Country Link
JP (1) JPS50110582A (US20100154141A1-20100624-C00001.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151366A (en) * 1979-05-16 1980-11-25 Matsushita Electric Ind Co Ltd Fabricating method of semiconductor device
JPS5731178A (en) * 1980-08-04 1982-02-19 Toshiba Corp Semiconductor device and manufacture thereof
US5952721A (en) * 1996-03-06 1999-09-14 Nec Corporation Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936785A (US20100154141A1-20100624-C00001.png) * 1972-08-11 1974-04-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936785A (US20100154141A1-20100624-C00001.png) * 1972-08-11 1974-04-05

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151366A (en) * 1979-05-16 1980-11-25 Matsushita Electric Ind Co Ltd Fabricating method of semiconductor device
JPS5731178A (en) * 1980-08-04 1982-02-19 Toshiba Corp Semiconductor device and manufacture thereof
US5952721A (en) * 1996-03-06 1999-09-14 Nec Corporation Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer

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