JPS50109596A - - Google Patents
Info
- Publication number
- JPS50109596A JPS50109596A JP1457874A JP1457874A JPS50109596A JP S50109596 A JPS50109596 A JP S50109596A JP 1457874 A JP1457874 A JP 1457874A JP 1457874 A JP1457874 A JP 1457874A JP S50109596 A JPS50109596 A JP S50109596A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1457874A JPS50109596A (de) | 1974-02-06 | 1974-02-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1457874A JPS50109596A (de) | 1974-02-06 | 1974-02-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50109596A true JPS50109596A (de) | 1975-08-28 |
Family
ID=11865031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1457874A Pending JPS50109596A (de) | 1974-02-06 | 1974-02-06 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS50109596A (de) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5648132A (en) * | 1979-09-14 | 1981-05-01 | Eaton Corp | Method and device for thermally conducting vacuum coated article to be treated |
JPS58194240A (ja) * | 1982-05-10 | 1983-11-12 | Nisshin Haiboruteeji Kk | イオン注入装置のタ−ゲツト冷却装置 |
JPS605540A (ja) * | 1979-03-16 | 1985-01-12 | バリアン・アソシエイツ・インコ−ポレイテツド | 半導体ウエ−フアの真空処理装置 |
US4832781A (en) * | 1988-01-07 | 1989-05-23 | Varian Associates, Inc. | Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum |
US4938992A (en) * | 1988-01-07 | 1990-07-03 | Varian Associates, Inc. | Methods for thermal transfer with a semiconductor |
US4997606A (en) * | 1988-01-07 | 1991-03-05 | Varian Associates, Inc. | Methods and apparatus for fabricating a high purity thermally-conductive polymer layer |
GB2347522A (en) * | 1999-03-02 | 2000-09-06 | Nec Corp | Method and apparatus for process control of semiconductor fabrication |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS466674A (en) * | 1970-05-15 | 1971-12-13 | Texas Instruments Inc | Electronic safety system |
-
1974
- 1974-02-06 JP JP1457874A patent/JPS50109596A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS466674A (en) * | 1970-05-15 | 1971-12-13 | Texas Instruments Inc | Electronic safety system |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605540A (ja) * | 1979-03-16 | 1985-01-12 | バリアン・アソシエイツ・インコ−ポレイテツド | 半導体ウエ−フアの真空処理装置 |
JPS6323616B2 (de) * | 1979-03-16 | 1988-05-17 | Varian Associates | |
JPS5648132A (en) * | 1979-09-14 | 1981-05-01 | Eaton Corp | Method and device for thermally conducting vacuum coated article to be treated |
JPH0227778B2 (de) * | 1979-09-14 | 1990-06-19 | Eaton Corp | |
JPS58194240A (ja) * | 1982-05-10 | 1983-11-12 | Nisshin Haiboruteeji Kk | イオン注入装置のタ−ゲツト冷却装置 |
JPS6322409B2 (de) * | 1982-05-10 | 1988-05-11 | Nitsushin Haiboruteeji Kk | |
US4832781A (en) * | 1988-01-07 | 1989-05-23 | Varian Associates, Inc. | Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum |
US4938992A (en) * | 1988-01-07 | 1990-07-03 | Varian Associates, Inc. | Methods for thermal transfer with a semiconductor |
US4997606A (en) * | 1988-01-07 | 1991-03-05 | Varian Associates, Inc. | Methods and apparatus for fabricating a high purity thermally-conductive polymer layer |
GB2347522A (en) * | 1999-03-02 | 2000-09-06 | Nec Corp | Method and apparatus for process control of semiconductor fabrication |
GB2347522B (en) * | 1999-03-02 | 2001-07-11 | Nec Corp | Method and apparatus for process control of semiconductor device fabrication line |