JPS50108190A - - Google Patents
Info
- Publication number
- JPS50108190A JPS50108190A JP1427074A JP1427074A JPS50108190A JP S50108190 A JPS50108190 A JP S50108190A JP 1427074 A JP1427074 A JP 1427074A JP 1427074 A JP1427074 A JP 1427074A JP S50108190 A JPS50108190 A JP S50108190A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Separation By Low-Temperature Treatments (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1427074A JPS50108190A (ru) | 1974-02-04 | 1974-02-04 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1427074A JPS50108190A (ru) | 1974-02-04 | 1974-02-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50108190A true JPS50108190A (ru) | 1975-08-26 |
Family
ID=11856385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1427074A Pending JPS50108190A (ru) | 1974-02-04 | 1974-02-04 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS50108190A (ru) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52107297A (en) * | 1976-02-25 | 1977-09-08 | Tioxide Group Ltd | Recovery of chlorine from chlorine containing gases |
JPH05226251A (ja) * | 1991-06-14 | 1993-09-03 | Semiconductor Energy Lab Co Ltd | 高品質成膜方法及びigfetの作製方法 |
-
1974
- 1974-02-04 JP JP1427074A patent/JPS50108190A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52107297A (en) * | 1976-02-25 | 1977-09-08 | Tioxide Group Ltd | Recovery of chlorine from chlorine containing gases |
JPS5622801B2 (ru) * | 1976-02-25 | 1981-05-27 | ||
JPH05226251A (ja) * | 1991-06-14 | 1993-09-03 | Semiconductor Energy Lab Co Ltd | 高品質成膜方法及びigfetの作製方法 |
JP2654456B2 (ja) * | 1991-06-14 | 1997-09-17 | 株式会社 半導体エネルギー研究所 | 高品質igfetの作製方法 |