JPS50105550A - - Google Patents

Info

Publication number
JPS50105550A
JPS50105550A JP48137349A JP13734973A JPS50105550A JP S50105550 A JPS50105550 A JP S50105550A JP 48137349 A JP48137349 A JP 48137349A JP 13734973 A JP13734973 A JP 13734973A JP S50105550 A JPS50105550 A JP S50105550A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48137349A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48137349A priority Critical patent/JPS50105550A/ja
Publication of JPS50105550A publication Critical patent/JPS50105550A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP48137349A 1973-12-11 1973-12-11 Pending JPS50105550A (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48137349A JPS50105550A (enExample) 1973-12-11 1973-12-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48137349A JPS50105550A (enExample) 1973-12-11 1973-12-11

Publications (1)

Publication Number Publication Date
JPS50105550A true JPS50105550A (enExample) 1975-08-20

Family

ID=15196559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48137349A Pending JPS50105550A (enExample) 1973-12-11 1973-12-11

Country Status (1)

Country Link
JP (1) JPS50105550A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59170270A (ja) * 1983-03-15 1984-09-26 Toshiba Corp 膜形成装置
JPS59184519A (ja) * 1983-04-05 1984-10-19 Agency Of Ind Science & Technol イオン化クラスタビーム発生方法
JPS6191918A (ja) * 1984-10-11 1986-05-10 Futaba Corp 化合物薄膜の製造装置
JPH04354865A (ja) * 1991-05-31 1992-12-09 Res Dev Corp Of Japan 超低速クラスターイオンビームによる表面処理方法
WO2007108525A1 (en) * 2006-03-17 2007-09-27 Canon Kabushiki Kaisha Film deposition apparatus and method of film deposition
CN109786204A (zh) * 2019-01-18 2019-05-21 东莞亚纳纳米科技有限公司 一种利用气体团簇溅射靶材引出离子束流的方法及离子源

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59170270A (ja) * 1983-03-15 1984-09-26 Toshiba Corp 膜形成装置
JPS59184519A (ja) * 1983-04-05 1984-10-19 Agency Of Ind Science & Technol イオン化クラスタビーム発生方法
JPS6191918A (ja) * 1984-10-11 1986-05-10 Futaba Corp 化合物薄膜の製造装置
JPH04354865A (ja) * 1991-05-31 1992-12-09 Res Dev Corp Of Japan 超低速クラスターイオンビームによる表面処理方法
WO2007108525A1 (en) * 2006-03-17 2007-09-27 Canon Kabushiki Kaisha Film deposition apparatus and method of film deposition
CN109786204A (zh) * 2019-01-18 2019-05-21 东莞亚纳纳米科技有限公司 一种利用气体团簇溅射靶材引出离子束流的方法及离子源

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