JPS50100972A - - Google Patents
Info
- Publication number
- JPS50100972A JPS50100972A JP49124502A JP12450274A JPS50100972A JP S50100972 A JPS50100972 A JP S50100972A JP 49124502 A JP49124502 A JP 49124502A JP 12450274 A JP12450274 A JP 12450274A JP S50100972 A JPS50100972 A JP S50100972A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41101173A | 1973-10-30 | 1973-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50100972A true JPS50100972A (OSRAM) | 1975-08-11 |
Family
ID=23627187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49124502A Pending JPS50100972A (OSRAM) | 1973-10-30 | 1974-10-30 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS50100972A (OSRAM) |
| DE (1) | DE2450896A1 (OSRAM) |
| FR (1) | FR2249444B1 (OSRAM) |
| GB (1) | GB1493825A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59500643A (ja) * | 1982-04-09 | 1984-04-12 | ヒユ−ズ・エアクラフト・カンパニ− | 温度勾配ゾ−ン熔融プロセス、および装置 |
| JPS6230333U (OSRAM) * | 1985-08-08 | 1987-02-24 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2544131B1 (fr) * | 1983-04-08 | 1985-07-05 | Telecommunications Sa | Detecteur photovoltaique en immersion optique |
-
1974
- 1974-10-25 DE DE19742450896 patent/DE2450896A1/de not_active Ceased
- 1974-10-28 GB GB46512/74A patent/GB1493825A/en not_active Expired
- 1974-10-30 JP JP49124502A patent/JPS50100972A/ja active Pending
- 1974-10-30 FR FR7436247A patent/FR2249444B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59500643A (ja) * | 1982-04-09 | 1984-04-12 | ヒユ−ズ・エアクラフト・カンパニ− | 温度勾配ゾ−ン熔融プロセス、および装置 |
| JPS6230333U (OSRAM) * | 1985-08-08 | 1987-02-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2249444A1 (OSRAM) | 1975-05-23 |
| DE2450896A1 (de) | 1975-05-07 |
| GB1493825A (en) | 1977-11-30 |
| FR2249444B1 (OSRAM) | 1980-11-07 |