JPS50100970A - - Google Patents

Info

Publication number
JPS50100970A
JPS50100970A JP49124497A JP12449774A JPS50100970A JP S50100970 A JPS50100970 A JP S50100970A JP 49124497 A JP49124497 A JP 49124497A JP 12449774 A JP12449774 A JP 12449774A JP S50100970 A JPS50100970 A JP S50100970A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49124497A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50100970A publication Critical patent/JPS50100970A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
JP49124497A 1973-10-30 1974-10-30 Pending JPS50100970A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US411021A US3910801A (en) 1973-10-30 1973-10-30 High velocity thermal migration method of making deep diodes

Publications (1)

Publication Number Publication Date
JPS50100970A true JPS50100970A (ja) 1975-08-11

Family

ID=23627234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49124497A Pending JPS50100970A (ja) 1973-10-30 1974-10-30

Country Status (6)

Country Link
US (1) US3910801A (ja)
JP (1) JPS50100970A (ja)
DE (1) DE2450854A1 (ja)
FR (1) FR2249436A1 (ja)
GB (1) GB1493826A (ja)
SE (1) SE397434B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998661A (en) * 1975-12-31 1976-12-21 General Electric Company Uniform migration of an annular shaped molten zone through a solid body
US4006040A (en) * 1975-12-31 1977-02-01 General Electric Company Semiconductor device manufacture
US4012236A (en) * 1975-12-31 1977-03-15 General Electric Company Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
US4398974A (en) * 1982-04-09 1983-08-16 Hughes Aircraft Company Temperature gradient zone melting process employing a buffer layer
DE10302653A1 (de) * 2003-01-20 2004-08-19 Htm Reetz Gmbh Vorrichtung zur Thermomigration
US20060128147A1 (en) * 2004-12-09 2006-06-15 Honeywell International Inc. Method of fabricating electrically conducting vias in a silicon wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2419237A (en) * 1945-01-18 1947-04-22 Bell Telephone Labor Inc Translating material and device and method of making them
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US3340601A (en) * 1963-07-17 1967-09-12 United Aircraft Corp Alloy diffused transistor
US3360851A (en) * 1965-10-01 1968-01-02 Bell Telephone Labor Inc Small area semiconductor device
US3484302A (en) * 1966-01-18 1969-12-16 Fujitsu Ltd Method of growing semiconductor crystals

Also Published As

Publication number Publication date
DE2450854A1 (de) 1975-05-07
SE397434B (sv) 1977-10-31
GB1493826A (en) 1977-11-30
SE7413674L (ja) 1975-05-02
US3910801A (en) 1975-10-07
FR2249436A1 (ja) 1975-05-23

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