JPS4999266A - - Google Patents
Info
- Publication number
- JPS4999266A JPS4999266A JP48010668A JP1066873A JPS4999266A JP S4999266 A JPS4999266 A JP S4999266A JP 48010668 A JP48010668 A JP 48010668A JP 1066873 A JP1066873 A JP 1066873A JP S4999266 A JPS4999266 A JP S4999266A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Gas-Filled Discharge Tubes (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP48010668A JPS4999266A (de) | 1973-01-27 | 1973-01-27 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP48010668A JPS4999266A (de) | 1973-01-27 | 1973-01-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4999266A true JPS4999266A (de) | 1974-09-19 |
Family
ID=11756609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP48010668A Pending JPS4999266A (de) | 1973-01-27 | 1973-01-27 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS4999266A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4354140A (en) * | 1979-05-28 | 1982-10-12 | Zaidan Hojin Handotai Kenkyu Shinkokai | Light-emitting semiconductor |
US4619718A (en) * | 1980-06-12 | 1986-10-28 | Nishizawa Junichi | Method of manufacturing a Group II-VI semiconductor device having a PN junction |
-
1973
- 1973-01-27 JP JP48010668A patent/JPS4999266A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4354140A (en) * | 1979-05-28 | 1982-10-12 | Zaidan Hojin Handotai Kenkyu Shinkokai | Light-emitting semiconductor |
US4619718A (en) * | 1980-06-12 | 1986-10-28 | Nishizawa Junichi | Method of manufacturing a Group II-VI semiconductor device having a PN junction |