JPS4993202A - - Google Patents
Info
- Publication number
- JPS4993202A JPS4993202A JP524073A JP524073A JPS4993202A JP S4993202 A JPS4993202 A JP S4993202A JP 524073 A JP524073 A JP 524073A JP 524073 A JP524073 A JP 524073A JP S4993202 A JPS4993202 A JP S4993202A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP524073A JPS4993202A (ja) | 1973-01-10 | 1973-01-10 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP524073A JPS4993202A (ja) | 1973-01-10 | 1973-01-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4993202A true JPS4993202A (ja) | 1974-09-05 |
Family
ID=11605660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP524073A Pending JPS4993202A (ja) | 1973-01-10 | 1973-01-10 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS4993202A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63291887A (ja) * | 1987-05-25 | 1988-11-29 | Shin Etsu Handotai Co Ltd | 半導体単結晶製造装置 |
JPH0524966A (ja) * | 1991-07-16 | 1993-02-02 | Shin Etsu Handotai Co Ltd | Fz法による半導体シリコン単結晶の製造方法 |
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1973
- 1973-01-10 JP JP524073A patent/JPS4993202A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63291887A (ja) * | 1987-05-25 | 1988-11-29 | Shin Etsu Handotai Co Ltd | 半導体単結晶製造装置 |
JPH0534316B2 (ja) * | 1987-05-25 | 1993-05-21 | Shinetsu Handotai Kk | |
JPH0524966A (ja) * | 1991-07-16 | 1993-02-02 | Shin Etsu Handotai Co Ltd | Fz法による半導体シリコン単結晶の製造方法 |