JPS4991194A - - Google Patents
Info
- Publication number
- JPS4991194A JPS4991194A JP50073A JP50073A JPS4991194A JP S4991194 A JPS4991194 A JP S4991194A JP 50073 A JP50073 A JP 50073A JP 50073 A JP50073 A JP 50073A JP S4991194 A JPS4991194 A JP S4991194A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50073A JPS4991194A (ja) | 1972-12-29 | 1972-12-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50073A JPS4991194A (ja) | 1972-12-29 | 1972-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4991194A true JPS4991194A (ja) | 1974-08-30 |
Family
ID=11475464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50073A Pending JPS4991194A (ja) | 1972-12-29 | 1972-12-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4991194A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147470A (en) * | 1977-05-27 | 1978-12-22 | Nippon Telegr & Teleph Corp <Ntt> | Mos type field effect transistor and production of the same |
| JPS5415680A (en) * | 1977-07-06 | 1979-02-05 | Fujitsu Ltd | Semiconductor device |
| JPH02283016A (ja) * | 1989-04-25 | 1990-11-20 | Sony Corp | ホウ素含有半導体層の形成方法 |
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1972
- 1972-12-29 JP JP50073A patent/JPS4991194A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147470A (en) * | 1977-05-27 | 1978-12-22 | Nippon Telegr & Teleph Corp <Ntt> | Mos type field effect transistor and production of the same |
| JPS5744024B2 (ja) * | 1977-05-27 | 1982-09-18 | ||
| JPS5415680A (en) * | 1977-07-06 | 1979-02-05 | Fujitsu Ltd | Semiconductor device |
| JPH02283016A (ja) * | 1989-04-25 | 1990-11-20 | Sony Corp | ホウ素含有半導体層の形成方法 |