JPS4987270A - - Google Patents

Info

Publication number
JPS4987270A
JPS4987270A JP48091356A JP9135673A JPS4987270A JP S4987270 A JPS4987270 A JP S4987270A JP 48091356 A JP48091356 A JP 48091356A JP 9135673 A JP9135673 A JP 9135673A JP S4987270 A JPS4987270 A JP S4987270A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48091356A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4987270A publication Critical patent/JPS4987270A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/792Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K21/00Details of pulse counters or frequency dividers
    • H03K21/40Monitoring; Error detection; Preventing or correcting improper counter operation
    • H03K21/403Arrangements for storing the counting state in case of power supply interruption

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP48091356A 1972-08-16 1973-08-16 Pending JPS4987270A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00281069A US3845327A (en) 1972-08-16 1972-08-16 Counter with memory utilizing mnos memory elements

Publications (1)

Publication Number Publication Date
JPS4987270A true JPS4987270A (ja) 1974-08-21

Family

ID=23075819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48091356A Pending JPS4987270A (ja) 1972-08-16 1973-08-16

Country Status (3)

Country Link
US (1) US3845327A (ja)
JP (1) JPS4987270A (ja)
CA (1) CA977835A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518863A (en) * 1974-07-10 1976-01-24 Tokyo Shibaura Electric Co N shinkaunta
JPS518862A (ja) * 1974-07-10 1976-01-24 Tokyo Shibaura Electric Co Purisetsutokaunta

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571149B2 (ja) * 1974-08-28 1982-01-09
US4057821A (en) * 1975-11-20 1977-11-08 Nitron Corporation/Mcdonnell-Douglas Corporation Non-volatile semiconductor memory device
US4095281A (en) * 1976-03-04 1978-06-13 Rca Corporation Random access-erasable read only memory cell
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4096509A (en) * 1976-07-22 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force MNOS memory transistor having a redeposited silicon nitride gate dielectric
US4132904A (en) * 1977-07-28 1979-01-02 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4193128A (en) * 1978-05-31 1980-03-11 Westinghouse Electric Corp. High-density memory with non-volatile storage array
US4456978A (en) * 1980-02-12 1984-06-26 General Instrument Corp. Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636530A (en) * 1969-09-10 1972-01-18 Litton Systems Inc Nonvolatile direct storage bistable circuit
US3657614A (en) * 1970-06-15 1972-04-18 Westinghouse Electric Corp Mis array utilizing field induced junctions
US3676717A (en) * 1970-11-02 1972-07-11 Ncr Co Nonvolatile flip-flop memory cell
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518863A (en) * 1974-07-10 1976-01-24 Tokyo Shibaura Electric Co N shinkaunta
JPS518862A (ja) * 1974-07-10 1976-01-24 Tokyo Shibaura Electric Co Purisetsutokaunta
JPS589611B2 (ja) * 1974-07-10 1983-02-22 株式会社東芝 N シンカウンタ
JPS589610B2 (ja) * 1974-07-10 1983-02-22 株式会社東芝 プリセツトカウンタ

Also Published As

Publication number Publication date
US3845327A (en) 1974-10-29
CA977835A (en) 1975-11-11

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