JPS4983387A - - Google Patents

Info

Publication number
JPS4983387A
JPS4983387A JP47125661A JP12566172A JPS4983387A JP S4983387 A JPS4983387 A JP S4983387A JP 47125661 A JP47125661 A JP 47125661A JP 12566172 A JP12566172 A JP 12566172A JP S4983387 A JPS4983387 A JP S4983387A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47125661A
Other languages
Japanese (ja)
Other versions
JPS5535866B2 (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12566172A priority Critical patent/JPS5535866B2/ja
Publication of JPS4983387A publication Critical patent/JPS4983387A/ja
Publication of JPS5535866B2 publication Critical patent/JPS5535866B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
JP12566172A 1972-12-14 1972-12-14 Expired JPS5535866B2 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12566172A JPS5535866B2 (zh) 1972-12-14 1972-12-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12566172A JPS5535866B2 (zh) 1972-12-14 1972-12-14

Publications (2)

Publication Number Publication Date
JPS4983387A true JPS4983387A (zh) 1974-08-10
JPS5535866B2 JPS5535866B2 (zh) 1980-09-17

Family

ID=14915513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12566172A Expired JPS5535866B2 (zh) 1972-12-14 1972-12-14

Country Status (1)

Country Link
JP (1) JPS5535866B2 (zh)

Also Published As

Publication number Publication date
JPS5535866B2 (zh) 1980-09-17

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