JPS4979694A - - Google Patents

Info

Publication number
JPS4979694A
JPS4979694A JP12460673A JP12460673A JPS4979694A JP S4979694 A JPS4979694 A JP S4979694A JP 12460673 A JP12460673 A JP 12460673A JP 12460673 A JP12460673 A JP 12460673A JP S4979694 A JPS4979694 A JP S4979694A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12460673A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4979694A publication Critical patent/JPS4979694A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083Vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
JP12460673A 1972-11-07 1973-11-07 Pending JPS4979694A (tr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7239347A FR2205748B1 (tr) 1972-11-07 1972-11-07

Publications (1)

Publication Number Publication Date
JPS4979694A true JPS4979694A (tr) 1974-08-01

Family

ID=9106746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12460673A Pending JPS4979694A (tr) 1972-11-07 1973-11-07

Country Status (3)

Country Link
JP (1) JPS4979694A (tr)
FR (1) FR2205748B1 (tr)
NL (1) NL7315132A (tr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB856430A (en) * 1956-12-13 1960-12-14 Mullard Ltd Improvements in and relating to semi-conductive devices
NL7111212A (tr) * 1970-08-24 1972-02-28

Also Published As

Publication number Publication date
FR2205748A1 (tr) 1974-05-31
NL7315132A (tr) 1974-05-09
FR2205748B1 (tr) 1977-07-29

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