JPS4974887A - - Google Patents

Info

Publication number
JPS4974887A
JPS4974887A JP11537173A JP11537173A JPS4974887A JP S4974887 A JPS4974887 A JP S4974887A JP 11537173 A JP11537173 A JP 11537173A JP 11537173 A JP11537173 A JP 11537173A JP S4974887 A JPS4974887 A JP S4974887A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11537173A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4974887A publication Critical patent/JPS4974887A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP11537173A 1972-10-16 1973-10-16 Pending JPS4974887A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722250613 DE2250613A1 (de) 1972-10-16 1972-10-16 Isolierschicht-feldeffekttransistor

Publications (1)

Publication Number Publication Date
JPS4974887A true JPS4974887A (zh) 1974-07-19

Family

ID=5859143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11537173A Pending JPS4974887A (zh) 1972-10-16 1973-10-16

Country Status (6)

Country Link
JP (1) JPS4974887A (zh)
AU (1) AU6119673A (zh)
DE (1) DE2250613A1 (zh)
FR (1) FR2203173B1 (zh)
IT (1) IT995581B (zh)
NL (1) NL7314048A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158239A (en) * 1977-12-20 1979-06-12 International Business Machines Corporation Resistive gate FET flip-flop storage cell
USRE32071E (en) * 1977-12-20 1986-01-21 International Business Machines Corporation Resistive gate FET flip-flop storage cell
EP0020164B1 (en) * 1979-05-30 1983-05-11 Xerox Corporation Monolithic hvmosfet array

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1572934A (zh) * 1967-10-09 1969-06-27

Also Published As

Publication number Publication date
FR2203173A1 (zh) 1974-05-10
NL7314048A (zh) 1974-04-18
FR2203173B1 (zh) 1977-03-11
AU6119673A (en) 1975-04-10
IT995581B (it) 1975-11-20
DE2250613A1 (de) 1974-04-25

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