JPS4972182A - - Google Patents

Info

Publication number
JPS4972182A
JPS4972182A JP48110084A JP11008473A JPS4972182A JP S4972182 A JPS4972182 A JP S4972182A JP 48110084 A JP48110084 A JP 48110084A JP 11008473 A JP11008473 A JP 11008473A JP S4972182 A JPS4972182 A JP S4972182A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48110084A
Other languages
Japanese (ja)
Other versions
JPS5336431B2 (US20020193084A1-20021219-M00002.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247710 external-priority patent/DE2247710C3/de
Application filed filed Critical
Publication of JPS4972182A publication Critical patent/JPS4972182A/ja
Publication of JPS5336431B2 publication Critical patent/JPS5336431B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/12Liquid-phase epitaxial-layer growth characterised by the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/10Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/10Controlling or regulating
    • C30B19/106Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/955Melt-back

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11008473A 1972-09-28 1973-09-28 Expired JPS5336431B2 (US20020193084A1-20021219-M00002.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722247710 DE2247710C3 (de) 1972-09-28 Flüssigphasen-Epitaxieverfahren und Vorrichtung zu dessen Durchführung

Publications (2)

Publication Number Publication Date
JPS4972182A true JPS4972182A (US20020193084A1-20021219-M00002.png) 1974-07-12
JPS5336431B2 JPS5336431B2 (US20020193084A1-20021219-M00002.png) 1978-10-03

Family

ID=5857691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11008473A Expired JPS5336431B2 (US20020193084A1-20021219-M00002.png) 1972-09-28 1973-09-28

Country Status (10)

Country Link
US (1) US3880680A (US20020193084A1-20021219-M00002.png)
JP (1) JPS5336431B2 (US20020193084A1-20021219-M00002.png)
AT (1) AT341579B (US20020193084A1-20021219-M00002.png)
BE (1) BE805406A (US20020193084A1-20021219-M00002.png)
CA (1) CA1004962A (US20020193084A1-20021219-M00002.png)
FR (1) FR2201131B1 (US20020193084A1-20021219-M00002.png)
GB (1) GB1433161A (US20020193084A1-20021219-M00002.png)
IT (1) IT995486B (US20020193084A1-20021219-M00002.png)
LU (1) LU68508A1 (US20020193084A1-20021219-M00002.png)
NL (1) NL7313421A (US20020193084A1-20021219-M00002.png)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080280A (US20020193084A1-20021219-M00002.png) * 1973-11-20 1975-06-30
JPS5222478A (en) * 1975-08-11 1977-02-19 Siemens Ag Liquiddphase epitaxial method
JPS52115783A (en) * 1976-03-24 1977-09-28 Sumitomo Electric Ind Ltd Liquid phase epitaxial growth
JPS5575998A (en) * 1978-12-04 1980-06-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growing method

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111476A (en) * 1975-03-26 1976-10-01 Sumitomo Electric Ind Ltd Method of liquid phase epitaxial crystal growth
US4160682A (en) * 1978-03-30 1979-07-10 Western Electric Co., Inc. Depositing materials on stacked semiconductor wafers
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
US4594126A (en) * 1983-09-12 1986-06-10 Cook Melvin S Growth of thin epitaxial films on moving substrates from flowing solutions
US4597823A (en) * 1983-09-12 1986-07-01 Cook Melvin S Rapid LPE crystal growth
US5585305A (en) * 1991-08-29 1996-12-17 Shin-Etsu Handotai Co. Ltd. Method for fabricating a semiconductor device
KR20010015636A (ko) * 1997-10-27 2001-02-26 에브게니 인비에비치 지바르기초프 원주형 구조를 가진 음극발광 스크린 및 그 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631836A (en) * 1969-08-06 1972-01-04 Motorola Inc Fixed gradient liquid epitaxy apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631836A (en) * 1969-08-06 1972-01-04 Motorola Inc Fixed gradient liquid epitaxy apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080280A (US20020193084A1-20021219-M00002.png) * 1973-11-20 1975-06-30
JPS5222478A (en) * 1975-08-11 1977-02-19 Siemens Ag Liquiddphase epitaxial method
JPS52115783A (en) * 1976-03-24 1977-09-28 Sumitomo Electric Ind Ltd Liquid phase epitaxial growth
JPS564517B2 (US20020193084A1-20021219-M00002.png) * 1976-03-24 1981-01-30
JPS5575998A (en) * 1978-12-04 1980-06-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growing method

Also Published As

Publication number Publication date
CA1004962A (en) 1977-02-08
JPS5336431B2 (US20020193084A1-20021219-M00002.png) 1978-10-03
LU68508A1 (US20020193084A1-20021219-M00002.png) 1974-04-02
FR2201131A1 (US20020193084A1-20021219-M00002.png) 1974-04-26
ATA692873A (de) 1977-06-15
DE2247710A1 (de) 1974-04-11
BE805406A (fr) 1974-03-27
AT341579B (de) 1978-02-10
US3880680A (en) 1975-04-29
GB1433161A (en) 1976-04-22
NL7313421A (US20020193084A1-20021219-M00002.png) 1974-04-01
DE2247710B2 (de) 1977-05-05
FR2201131B1 (US20020193084A1-20021219-M00002.png) 1977-03-11
IT995486B (it) 1975-11-10

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