JPS4971874A - - Google Patents
Info
- Publication number
- JPS4971874A JPS4971874A JP11320572A JP11320572A JPS4971874A JP S4971874 A JPS4971874 A JP S4971874A JP 11320572 A JP11320572 A JP 11320572A JP 11320572 A JP11320572 A JP 11320572A JP S4971874 A JPS4971874 A JP S4971874A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11320572A JPS5631750B2 (enExample) | 1972-11-10 | 1972-11-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11320572A JPS5631750B2 (enExample) | 1972-11-10 | 1972-11-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4971874A true JPS4971874A (enExample) | 1974-07-11 |
| JPS5631750B2 JPS5631750B2 (enExample) | 1981-07-23 |
Family
ID=14606205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11320572A Expired JPS5631750B2 (enExample) | 1972-11-10 | 1972-11-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5631750B2 (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039880A (enExample) * | 1973-08-13 | 1975-04-12 | ||
| JPS5197984A (en) * | 1975-02-26 | 1976-08-28 | Shotsutoki baria geetodenkaikokatoranjisuta oyobi sonoseizohoho | |
| JPS51112184A (en) * | 1975-02-26 | 1976-10-04 | Nec Corp | Shottky barrier layer gate type twine gates field-effect transistor an d its making |
| JPS52182A (en) * | 1975-06-20 | 1977-01-05 | Nec Corp | Method of forming planar type fet electrodes |
| JPS5322378A (en) * | 1976-08-13 | 1978-03-01 | Fujitsu Ltd | Production of field effect transistor s |
| JPS54117925U (enExample) * | 1978-02-07 | 1979-08-18 | ||
| JPS60263479A (ja) * | 1984-06-12 | 1985-12-26 | Nec Corp | 半導体装置の製造方法 |
-
1972
- 1972-11-10 JP JP11320572A patent/JPS5631750B2/ja not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039880A (enExample) * | 1973-08-13 | 1975-04-12 | ||
| JPS5197984A (en) * | 1975-02-26 | 1976-08-28 | Shotsutoki baria geetodenkaikokatoranjisuta oyobi sonoseizohoho | |
| JPS51112184A (en) * | 1975-02-26 | 1976-10-04 | Nec Corp | Shottky barrier layer gate type twine gates field-effect transistor an d its making |
| JPS52182A (en) * | 1975-06-20 | 1977-01-05 | Nec Corp | Method of forming planar type fet electrodes |
| JPS5322378A (en) * | 1976-08-13 | 1978-03-01 | Fujitsu Ltd | Production of field effect transistor s |
| JPS54117925U (enExample) * | 1978-02-07 | 1979-08-18 | ||
| JPS60263479A (ja) * | 1984-06-12 | 1985-12-26 | Nec Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5631750B2 (enExample) | 1981-07-23 |