JPS4968631A - - Google Patents
Info
- Publication number
- JPS4968631A JPS4968631A JP47111468A JP11146872A JPS4968631A JP S4968631 A JPS4968631 A JP S4968631A JP 47111468 A JP47111468 A JP 47111468A JP 11146872 A JP11146872 A JP 11146872A JP S4968631 A JPS4968631 A JP S4968631A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
- G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11146872A JPS5727545B2 (ru) | 1972-11-06 | 1972-11-06 | |
FR7339386A FR2205708B1 (ru) | 1972-11-06 | 1973-11-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11146872A JPS5727545B2 (ru) | 1972-11-06 | 1972-11-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4968631A true JPS4968631A (ru) | 1974-07-03 |
JPS5727545B2 JPS5727545B2 (ru) | 1982-06-11 |
Family
ID=14561995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11146872A Expired JPS5727545B2 (ru) | 1972-11-06 | 1972-11-06 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5727545B2 (ru) |
FR (1) | FR2205708B1 (ru) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5166736A (ru) * | 1974-10-30 | 1976-06-09 | Hitachi Ltd | |
JPS51147224A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Semiconductor memory |
JPS5271141A (en) * | 1975-12-10 | 1977-06-14 | Hitachi Ltd | Word line driving circuit |
JPS5493335A (en) * | 1977-12-30 | 1979-07-24 | Fujitsu Ltd | Decoder circuit |
JPS59127294A (ja) * | 1982-12-30 | 1984-07-23 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 高密度半導体メモリのワ−ド線デコ−ダ及びドライバ回路 |
JPS6098598A (ja) * | 1983-11-01 | 1985-06-01 | Fujitsu Ltd | 半導体記憶装置 |
JPS63171494A (ja) * | 1987-02-20 | 1988-07-15 | Toshiba Corp | アドレス選択回路 |
JPS63239691A (ja) * | 1980-02-04 | 1988-10-05 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体メモリバッファ |
JPS63275099A (ja) * | 1987-05-07 | 1988-11-11 | Matsushita Electronics Corp | 半導体記憶装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5625291A (en) * | 1979-08-07 | 1981-03-11 | Nec Corp | Semiconductor circuit |
JPS6042554B2 (ja) * | 1980-12-24 | 1985-09-24 | 富士通株式会社 | Cmosメモリデコ−ダ回路 |
-
1972
- 1972-11-06 JP JP11146872A patent/JPS5727545B2/ja not_active Expired
-
1973
- 1973-11-06 FR FR7339386A patent/FR2205708B1/fr not_active Expired
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5166736A (ru) * | 1974-10-30 | 1976-06-09 | Hitachi Ltd | |
JPS5816274B2 (ja) * | 1974-10-30 | 1983-03-30 | 株式会社日立製作所 | メモリ−カイロニオケルドライバ−カイロ |
JPS51147224A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Semiconductor memory |
JPS578549B2 (ru) * | 1975-06-13 | 1982-02-17 | ||
JPS5271141A (en) * | 1975-12-10 | 1977-06-14 | Hitachi Ltd | Word line driving circuit |
JPS557637B2 (ru) * | 1975-12-10 | 1980-02-27 | ||
JPS5760715B2 (ru) * | 1977-12-30 | 1982-12-21 | Fujitsu Ltd | |
JPS5493335A (en) * | 1977-12-30 | 1979-07-24 | Fujitsu Ltd | Decoder circuit |
JPS63239691A (ja) * | 1980-02-04 | 1988-10-05 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体メモリバッファ |
JPS59127294A (ja) * | 1982-12-30 | 1984-07-23 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 高密度半導体メモリのワ−ド線デコ−ダ及びドライバ回路 |
JPS6098598A (ja) * | 1983-11-01 | 1985-06-01 | Fujitsu Ltd | 半導体記憶装置 |
JPH0458119B2 (ru) * | 1983-11-01 | 1992-09-16 | Fujitsu Ltd | |
JPS63171494A (ja) * | 1987-02-20 | 1988-07-15 | Toshiba Corp | アドレス選択回路 |
JPH0522319B2 (ru) * | 1987-02-20 | 1993-03-29 | Tokyo Shibaura Electric Co | |
JPS63275099A (ja) * | 1987-05-07 | 1988-11-11 | Matsushita Electronics Corp | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5727545B2 (ru) | 1982-06-11 |
FR2205708B1 (ru) | 1983-09-23 |
FR2205708A1 (ru) | 1974-05-31 |