JPS4961793A - - Google Patents

Info

Publication number
JPS4961793A
JPS4961793A JP48049854A JP4985473A JPS4961793A JP S4961793 A JPS4961793 A JP S4961793A JP 48049854 A JP48049854 A JP 48049854A JP 4985473 A JP4985473 A JP 4985473A JP S4961793 A JPS4961793 A JP S4961793A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48049854A
Other languages
Japanese (ja)
Other versions
JPS5510664B2 (US20100268047A1-20101021-C00003.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4961793A publication Critical patent/JPS4961793A/ja
Publication of JPS5510664B2 publication Critical patent/JPS5510664B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018Glow discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Discharge Heating (AREA)
  • Physical Vapour Deposition (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Furnace Charging Or Discharging (AREA)
JP4985473A 1972-05-08 1973-05-07 Expired JPS5510664B2 (US20100268047A1-20101021-C00003.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25127472A 1972-05-08 1972-05-08

Publications (2)

Publication Number Publication Date
JPS4961793A true JPS4961793A (US20100268047A1-20101021-C00003.png) 1974-06-14
JPS5510664B2 JPS5510664B2 (US20100268047A1-20101021-C00003.png) 1980-03-18

Family

ID=22951228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4985473A Expired JPS5510664B2 (US20100268047A1-20101021-C00003.png) 1972-05-08 1973-05-07

Country Status (4)

Country Link
US (1) US3739220A (US20100268047A1-20101021-C00003.png)
JP (1) JPS5510664B2 (US20100268047A1-20101021-C00003.png)
DE (1) DE2322689A1 (US20100268047A1-20101021-C00003.png)
GB (1) GB1399571A (US20100268047A1-20101021-C00003.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0215158A (ja) * 1988-07-04 1990-01-18 Daido Steel Co Ltd プラズマ浸炭熱処理炉

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2606454C2 (de) * 1976-02-18 1978-01-12 lonit Anstalt Bernhard Berghaus, Vaduz Thermoelementeinsatz
US4328258A (en) * 1977-12-05 1982-05-04 Plasma Physics Corp. Method of forming semiconducting materials and barriers
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
JPH08209352A (ja) * 1995-02-06 1996-08-13 Hitachi Ltd プラズマ処理装置および方法
CN105132858B (zh) * 2015-08-06 2017-11-10 西华大学 内孔局域辉光等离子体放电装置及其使用方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0215158A (ja) * 1988-07-04 1990-01-18 Daido Steel Co Ltd プラズマ浸炭熱処理炉

Also Published As

Publication number Publication date
GB1399571A (en) 1975-07-02
DE2322689A1 (de) 1973-11-22
US3739220A (en) 1973-06-12
JPS5510664B2 (US20100268047A1-20101021-C00003.png) 1980-03-18

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