JPS4949587A - - Google Patents
Info
- Publication number
- JPS4949587A JPS4949587A JP48046866A JP4686673A JPS4949587A JP S4949587 A JPS4949587 A JP S4949587A JP 48046866 A JP48046866 A JP 48046866A JP 4686673 A JP4686673 A JP 4686673A JP S4949587 A JPS4949587 A JP S4949587A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Thyristors (AREA)
- Led Device Packages (AREA)
- Die Bonding (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24845372A | 1972-04-28 | 1972-04-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4949587A true JPS4949587A (OSRAM) | 1974-05-14 |
Family
ID=22939199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48046866A Pending JPS4949587A (OSRAM) | 1972-04-28 | 1973-04-26 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3796881A (OSRAM) |
| JP (1) | JPS4949587A (OSRAM) |
| CH (1) | CH566645A5 (OSRAM) |
| DE (1) | DE2320472C2 (OSRAM) |
| FR (1) | FR2182224B1 (OSRAM) |
| GB (1) | GB1432676A (OSRAM) |
| SE (1) | SE390086B (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57132471U (OSRAM) * | 1981-02-10 | 1982-08-18 | ||
| JPS589372A (ja) * | 1981-07-08 | 1983-01-19 | Mitsubishi Electric Corp | 光点弧サイリスタ |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144541A (en) * | 1977-01-27 | 1979-03-13 | Electric Power Research Institute, Inc. | Light-activated semiconductor device package unit |
| US4131905A (en) * | 1977-05-26 | 1978-12-26 | Electric Power Research Institute, Inc. | Light-triggered thyristor and package therefore |
| US4136357A (en) * | 1977-10-03 | 1979-01-23 | National Semiconductor Corporation | Integrated circuit package with optical input coupler |
| US4257058A (en) * | 1979-07-05 | 1981-03-17 | Electric Power Research Institute, Inc. | Package for radiation triggered semiconductor device and method |
| JPS5897864A (ja) * | 1981-12-07 | 1983-06-10 | Mitsubishi Electric Corp | 光トリガサイリスタ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3590344A (en) * | 1969-06-20 | 1971-06-29 | Westinghouse Electric Corp | Light activated semiconductor controlled rectifier |
-
1972
- 1972-04-28 US US00248453A patent/US3796881A/en not_active Expired - Lifetime
-
1973
- 1973-04-16 GB GB1823073A patent/GB1432676A/en not_active Expired
- 1973-04-21 DE DE2320472A patent/DE2320472C2/de not_active Expired
- 1973-04-26 JP JP48046866A patent/JPS4949587A/ja active Pending
- 1973-04-27 FR FR7315516A patent/FR2182224B1/fr not_active Expired
- 1973-04-27 SE SE7306035A patent/SE390086B/xx unknown
- 1973-04-27 CH CH606173A patent/CH566645A5/xx not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57132471U (OSRAM) * | 1981-02-10 | 1982-08-18 | ||
| JPS589372A (ja) * | 1981-07-08 | 1983-01-19 | Mitsubishi Electric Corp | 光点弧サイリスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1432676A (en) | 1976-04-22 |
| US3796881A (en) | 1974-03-12 |
| CH566645A5 (OSRAM) | 1975-09-15 |
| FR2182224B1 (OSRAM) | 1977-12-30 |
| FR2182224A1 (OSRAM) | 1973-12-07 |
| SE390086B (sv) | 1976-11-29 |
| DE2320472C2 (de) | 1983-05-05 |
| DE2320472A1 (de) | 1973-11-15 |