JPS4946677A - - Google Patents

Info

Publication number
JPS4946677A
JPS4946677A JP48080208A JP8020873A JPS4946677A JP S4946677 A JPS4946677 A JP S4946677A JP 48080208 A JP48080208 A JP 48080208A JP 8020873 A JP8020873 A JP 8020873A JP S4946677 A JPS4946677 A JP S4946677A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48080208A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722235069 external-priority patent/DE2235069C3/de
Application filed filed Critical
Publication of JPS4946677A publication Critical patent/JPS4946677A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/953—Making radiation resistant device

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP48080208A 1972-07-17 1973-07-16 Pending JPS4946677A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722235069 DE2235069C3 (de) 1972-07-17 Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxid-Deckschicht

Publications (1)

Publication Number Publication Date
JPS4946677A true JPS4946677A (ja) 1974-05-04

Family

ID=5850868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48080208A Pending JPS4946677A (ja) 1972-07-17 1973-07-16

Country Status (2)

Country Link
US (1) US3894890A (ja)
JP (1) JPS4946677A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS548051U (ja) * 1977-06-21 1979-01-19

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137099A (en) * 1977-07-11 1979-01-30 General Electric Company Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments
US4116721A (en) * 1977-11-25 1978-09-26 International Business Machines Corporation Gate charge neutralization for insulated gate field-effect transistors
US6674064B1 (en) 2001-07-18 2004-01-06 University Of Central Florida Method and system for performance improvement of photodetectors and solar cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448353A (en) * 1966-11-14 1969-06-03 Westinghouse Electric Corp Mos field effect transistor hall effect devices
US3513035A (en) * 1967-11-01 1970-05-19 Fairchild Camera Instr Co Semiconductor device process for reducing surface recombination velocity
US3781612A (en) * 1972-03-28 1973-12-25 Atomic Energy Commission Method of improving high-purity germanium radiation detectors
US3755671A (en) * 1972-09-29 1973-08-28 Rca Corp Method of providing a semiconductor body with piezoelectric properties

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS548051U (ja) * 1977-06-21 1979-01-19

Also Published As

Publication number Publication date
US3894890A (en) 1975-07-15

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