JPS4942294A - - Google Patents

Info

Publication number
JPS4942294A
JPS4942294A JP47022008A JP2200872A JPS4942294A JP S4942294 A JPS4942294 A JP S4942294A JP 47022008 A JP47022008 A JP 47022008A JP 2200872 A JP2200872 A JP 2200872A JP S4942294 A JPS4942294 A JP S4942294A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47022008A
Other languages
Japanese (ja)
Other versions
JPS5641186B2 (en, 2012
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2200872A priority Critical patent/JPS5641186B2/ja
Priority to DE2310724A priority patent/DE2310724C3/de
Priority to US00338252A priority patent/US3794891A/en
Publication of JPS4942294A publication Critical patent/JPS4942294A/ja
Publication of JPS5641186B2 publication Critical patent/JPS5641186B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
JP2200872A 1972-03-03 1972-03-03 Expired JPS5641186B2 (en, 2012)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2200872A JPS5641186B2 (en, 2012) 1972-03-03 1972-03-03
DE2310724A DE2310724C3 (de) 1972-03-03 1973-03-03 Phototransistor und Verfahren zu seiner Herstellung
US00338252A US3794891A (en) 1972-03-03 1973-03-05 High speed response phototransistor and method of making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2200872A JPS5641186B2 (en, 2012) 1972-03-03 1972-03-03

Publications (2)

Publication Number Publication Date
JPS4942294A true JPS4942294A (en, 2012) 1974-04-20
JPS5641186B2 JPS5641186B2 (en, 2012) 1981-09-26

Family

ID=12070962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2200872A Expired JPS5641186B2 (en, 2012) 1972-03-03 1972-03-03

Country Status (3)

Country Link
US (1) US3794891A (en, 2012)
JP (1) JPS5641186B2 (en, 2012)
DE (1) DE2310724C3 (en, 2012)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54126923A (en) * 1978-03-27 1979-10-02 Isamu Aoki Iron core insertion machine
JPS59125672A (ja) * 1983-01-07 1984-07-20 Toshiba Corp 半導体装置
JPH0575159A (ja) * 1991-09-18 1993-03-26 Nec Corp 光半導体装置
JPH0525715U (ja) * 1991-09-11 1993-04-02 勇 青木 鉄心挿入機
JP2011059115A (ja) * 2009-09-07 2011-03-24 National Central Univ 生体分子を測定するための蛍光検出システム、方法、およびデバイス

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958264A (en) * 1974-06-24 1976-05-18 International Business Machines Corporation Space-charge-limited phototransistor
US4720642A (en) * 1983-03-02 1988-01-19 Marks Alvin M Femto Diode and applications
US4212023A (en) * 1978-11-30 1980-07-08 General Electric Company Bilateral phototransistor
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
DE2922301C2 (de) * 1979-05-31 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung
US4698653A (en) * 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
NL8003906A (nl) * 1980-07-07 1982-02-01 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
NL8700370A (nl) * 1987-02-16 1988-09-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
GB2201543A (en) * 1987-02-25 1988-09-01 Philips Electronic Associated A photosensitive device
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
ITTO20110210A1 (it) * 2011-03-09 2012-09-10 Francesco Agus Cella fotovoltaica con giunzione p-n distribuita in modo spaziale nel substrato di semiconduttore

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3222530A (en) * 1961-06-07 1965-12-07 Philco Corp Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers
NL296170A (en, 2012) * 1962-10-04
NL6709192A (en, 2012) * 1967-07-01 1969-01-03
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
JPS4944530B1 (en, 2012) * 1970-01-23 1974-11-28
US3714526A (en) * 1971-02-19 1973-01-30 Nasa Phototransistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54126923A (en) * 1978-03-27 1979-10-02 Isamu Aoki Iron core insertion machine
JPS59125672A (ja) * 1983-01-07 1984-07-20 Toshiba Corp 半導体装置
JPH0525715U (ja) * 1991-09-11 1993-04-02 勇 青木 鉄心挿入機
JPH0575159A (ja) * 1991-09-18 1993-03-26 Nec Corp 光半導体装置
JP2011059115A (ja) * 2009-09-07 2011-03-24 National Central Univ 生体分子を測定するための蛍光検出システム、方法、およびデバイス

Also Published As

Publication number Publication date
JPS5641186B2 (en, 2012) 1981-09-26
US3794891A (en) 1974-02-26
DE2310724B2 (de) 1978-04-20
DE2310724C3 (de) 1983-11-10
DE2310724A1 (de) 1973-09-13

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