JPS4939370U - - Google Patents

Info

Publication number
JPS4939370U
JPS4939370U JP8057272U JP8057272U JPS4939370U JP S4939370 U JPS4939370 U JP S4939370U JP 8057272 U JP8057272 U JP 8057272U JP 8057272 U JP8057272 U JP 8057272U JP S4939370 U JPS4939370 U JP S4939370U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8057272U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8057272U priority Critical patent/JPS4939370U/ja
Publication of JPS4939370U publication Critical patent/JPS4939370U/ja
Pending legal-status Critical Current

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Landscapes

  • Electrodes Of Semiconductors (AREA)
JP8057272U 1972-07-10 1972-07-10 Pending JPS4939370U (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8057272U JPS4939370U (fr) 1972-07-10 1972-07-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8057272U JPS4939370U (fr) 1972-07-10 1972-07-10

Publications (1)

Publication Number Publication Date
JPS4939370U true JPS4939370U (fr) 1974-04-06

Family

ID=27986448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8057272U Pending JPS4939370U (fr) 1972-07-10 1972-07-10

Country Status (1)

Country Link
JP (1) JPS4939370U (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013124924A1 (fr) * 2012-02-23 2013-08-29 パナソニック株式会社 Puce électroluminescente de semi-conducteur au nitrure, dispositif électroluminescent à semi-conducteur au nitrure et procédé de fabrication d'une puce de semi-conducteur au nitrure
JP2013179368A (ja) * 2011-08-09 2013-09-09 Panasonic Corp 窒化物半導体層成長用構造、積層構造、窒化物系半導体素子および光源ならびにこれらの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013179368A (ja) * 2011-08-09 2013-09-09 Panasonic Corp 窒化物半導体層成長用構造、積層構造、窒化物系半導体素子および光源ならびにこれらの製造方法
WO2013124924A1 (fr) * 2012-02-23 2013-08-29 パナソニック株式会社 Puce électroluminescente de semi-conducteur au nitrure, dispositif électroluminescent à semi-conducteur au nitrure et procédé de fabrication d'une puce de semi-conducteur au nitrure
JP5398937B1 (ja) * 2012-02-23 2014-01-29 パナソニック株式会社 窒化物半導体発光チップ、窒化物半導体発光装置及び窒化物半導体チップの製造方法
US9379284B2 (en) 2012-02-23 2016-06-28 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor light emitting chip, and nitride semiconductor light emitting device

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