JPS493583A - - Google Patents
Info
- Publication number
- JPS493583A JPS493583A JP3976472A JP3976472A JPS493583A JP S493583 A JPS493583 A JP S493583A JP 3976472 A JP3976472 A JP 3976472A JP 3976472 A JP3976472 A JP 3976472A JP S493583 A JPS493583 A JP S493583A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3976472A JPS493583A (no) | 1972-04-20 | 1972-04-20 | |
| GB1869673A GB1425957A (en) | 1972-04-20 | 1973-04-18 | Gate controlled switches |
| NL7305643A NL7305643A (no) | 1972-04-20 | 1973-04-19 | |
| CA169,179A CA982701A (en) | 1972-04-20 | 1973-04-19 | Gate controlled switch |
| FR7314646A FR2185860B1 (no) | 1972-04-20 | 1973-04-20 | |
| DE19732320563 DE2320563B2 (de) | 1972-04-20 | 1973-04-21 | Vierschichttriode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3976472A JPS493583A (no) | 1972-04-20 | 1972-04-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS493583A true JPS493583A (no) | 1974-01-12 |
Family
ID=12561993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3976472A Pending JPS493583A (no) | 1972-04-20 | 1972-04-20 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS493583A (no) |
| CA (1) | CA982701A (no) |
| DE (1) | DE2320563B2 (no) |
| FR (1) | FR2185860B1 (no) |
| GB (1) | GB1425957A (no) |
| NL (1) | NL7305643A (no) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5630758A (en) * | 1979-08-21 | 1981-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Negative feedback type bipolar transistor |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5147583B2 (no) * | 1972-12-29 | 1976-12-15 | ||
| AT377645B (de) * | 1972-12-29 | 1985-04-10 | Sony Corp | Halbleiterbauteil |
| JPS5754969B2 (no) * | 1974-04-04 | 1982-11-20 | ||
| JPS5753672B2 (no) * | 1974-04-10 | 1982-11-13 | ||
| JPS57658B2 (no) * | 1974-04-16 | 1982-01-07 | ||
| JPS5714064B2 (no) * | 1974-04-25 | 1982-03-20 | ||
| JPS5718710B2 (no) * | 1974-05-10 | 1982-04-17 | ||
| JPS5648983B2 (no) * | 1974-05-10 | 1981-11-19 | ||
| DE2904424C2 (de) * | 1979-02-06 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
| JPS6043668B2 (ja) * | 1979-07-06 | 1985-09-30 | 株式会社日立製作所 | 半導体装置 |
| FR2803101B1 (fr) * | 1999-12-24 | 2002-04-12 | St Microelectronics Sa | Procede de fabrication de composants de puissance verticaux |
| CN113380883B (zh) * | 2021-06-08 | 2024-09-06 | 深圳市槟城电子股份有限公司 | 半导体放电管及供电电路 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| GB1196576A (en) * | 1968-03-06 | 1970-07-01 | Westinghouse Electric Corp | High Current Gate Controlled Switches |
-
1972
- 1972-04-20 JP JP3976472A patent/JPS493583A/ja active Pending
-
1973
- 1973-04-18 GB GB1869673A patent/GB1425957A/en not_active Expired
- 1973-04-19 CA CA169,179A patent/CA982701A/en not_active Expired
- 1973-04-19 NL NL7305643A patent/NL7305643A/xx not_active Application Discontinuation
- 1973-04-20 FR FR7314646A patent/FR2185860B1/fr not_active Expired
- 1973-04-21 DE DE19732320563 patent/DE2320563B2/de not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5630758A (en) * | 1979-08-21 | 1981-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Negative feedback type bipolar transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2185860B1 (no) | 1977-08-19 |
| NL7305643A (no) | 1973-10-23 |
| DE2320563A1 (de) | 1973-10-25 |
| DE2320563B2 (de) | 1976-04-01 |
| GB1425957A (en) | 1976-02-25 |
| CA982701A (en) | 1976-01-27 |
| FR2185860A1 (no) | 1974-01-04 |