JPS4934390B1 - - Google Patents
Info
- Publication number
- JPS4934390B1 JPS4934390B1 JP45086826A JP8682670A JPS4934390B1 JP S4934390 B1 JPS4934390 B1 JP S4934390B1 JP 45086826 A JP45086826 A JP 45086826A JP 8682670 A JP8682670 A JP 8682670A JP S4934390 B1 JPS4934390 B1 JP S4934390B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Adjustable Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45086826A JPS4934390B1 (zh) | 1970-10-02 | 1970-10-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45086826A JPS4934390B1 (zh) | 1970-10-02 | 1970-10-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4934390B1 true JPS4934390B1 (zh) | 1974-09-13 |
Family
ID=13897602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP45086826A Pending JPS4934390B1 (zh) | 1970-10-02 | 1970-10-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4934390B1 (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006009218A1 (ja) * | 2004-07-22 | 2006-01-26 | Nippon Telegraph And Telephone Corporation | ２安定抵抗値取得装置及びその製造方法並びに金属酸化物薄膜及びその製造方法 |
| WO2007023569A1 (ja) * | 2005-08-26 | 2007-03-01 | Fujitsu Limited | 不揮発性半導体記憶装置及びその書き込み方法 |
-
1970
- 1970-10-02 JP JP45086826A patent/JPS4934390B1/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006009218A1 (ja) * | 2004-07-22 | 2006-01-26 | Nippon Telegraph And Telephone Corporation | ２安定抵抗値取得装置及びその製造方法並びに金属酸化物薄膜及びその製造方法 |
| US7696502B2 (en) | 2004-07-22 | 2010-04-13 | Nippon Telegraph And Telephone Corporation | Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof |
| US7875872B2 (en) | 2004-07-22 | 2011-01-25 | Nippon Telegraph And Telephone Corporation | Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof |
| WO2007023569A1 (ja) * | 2005-08-26 | 2007-03-01 | Fujitsu Limited | 不揮発性半導体記憶装置及びその書き込み方法 |