JPS493302B1 - - Google Patents
Info
- Publication number
- JPS493302B1 JPS493302B1 JP45042935A JP4293570A JPS493302B1 JP S493302 B1 JPS493302 B1 JP S493302B1 JP 45042935 A JP45042935 A JP 45042935A JP 4293570 A JP4293570 A JP 4293570A JP S493302 B1 JPS493302 B1 JP S493302B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82654369A | 1969-05-21 | 1969-05-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS493302B1 true JPS493302B1 (ja) | 1974-01-25 |
Family
ID=25246830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP45042935A Pending JPS493302B1 (ja) | 1969-05-21 | 1970-05-21 |
Country Status (2)
Country | Link |
---|---|
US (1) | US3609472A (ja) |
JP (1) | JPS493302B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53102501U (ja) * | 1977-01-24 | 1978-08-18 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3791028A (en) * | 1971-09-17 | 1974-02-12 | Ibm | Ultrasonic bonding of cubic crystal-structure metals |
US3855612A (en) * | 1972-01-03 | 1974-12-17 | Signetics Corp | Schottky barrier diode semiconductor structure and method |
US3857161A (en) * | 1973-02-09 | 1974-12-31 | T Hutchins | Method of making a ductile hermetic indium seal |
US3938243A (en) * | 1973-02-20 | 1976-02-17 | Signetics Corporation | Schottky barrier diode semiconductor structure and method |
US4011143A (en) * | 1973-06-25 | 1977-03-08 | Honeywell Inc. | Material deposition masking for microcircuit structures |
DE2409312C3 (de) * | 1974-02-27 | 1981-01-08 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung |
US3986251A (en) * | 1974-10-03 | 1976-10-19 | Motorola, Inc. | Germanium doped light emitting diode bonding process |
US3986255A (en) * | 1974-11-29 | 1976-10-19 | Itek Corporation | Process for electrically interconnecting chips with substrates employing gold alloy bumps and magnetic materials therein |
US4094761A (en) * | 1977-07-25 | 1978-06-13 | Motorola, Inc. | Magnetion sputtering of ferromagnetic material |
US4374012A (en) * | 1977-09-14 | 1983-02-15 | Raytheon Company | Method of making semiconductor device having improved Schottky-barrier junction |
JPS584955A (ja) * | 1981-06-30 | 1983-01-12 | Shinko Electric Ind Co Ltd | 金めつきされた電子部品パツケ−ジ |
-
1969
- 1969-05-21 US US826543A patent/US3609472A/en not_active Expired - Lifetime
-
1970
- 1970-05-21 JP JP45042935A patent/JPS493302B1/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53102501U (ja) * | 1977-01-24 | 1978-08-18 |
Also Published As
Publication number | Publication date |
---|---|
US3609472A (en) | 1971-09-28 |