JPS4932589A - - Google Patents

Info

Publication number
JPS4932589A
JPS4932589A JP7362672A JP7362672A JPS4932589A JP S4932589 A JPS4932589 A JP S4932589A JP 7362672 A JP7362672 A JP 7362672A JP 7362672 A JP7362672 A JP 7362672A JP S4932589 A JPS4932589 A JP S4932589A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7362672A
Other languages
Japanese (ja)
Other versions
JPS5624397B2 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7362672A priority Critical patent/JPS5624397B2/ja
Priority to DE19732337116 priority patent/DE2337116A1/de
Publication of JPS4932589A publication Critical patent/JPS4932589A/ja
Publication of JPS5624397B2 publication Critical patent/JPS5624397B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP7362672A 1972-07-21 1972-07-21 Expired JPS5624397B2 (en:Method)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7362672A JPS5624397B2 (en:Method) 1972-07-21 1972-07-21
DE19732337116 DE2337116A1 (de) 1972-07-21 1973-07-20 Halbleiterschichtlaser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7362672A JPS5624397B2 (en:Method) 1972-07-21 1972-07-21

Publications (2)

Publication Number Publication Date
JPS4932589A true JPS4932589A (en:Method) 1974-03-25
JPS5624397B2 JPS5624397B2 (en:Method) 1981-06-05

Family

ID=13523701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7362672A Expired JPS5624397B2 (en:Method) 1972-07-21 1972-07-21

Country Status (2)

Country Link
JP (1) JPS5624397B2 (en:Method)
DE (1) DE2337116A1 (en:Method)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en:Method) * 1973-01-11 1974-09-06
JPS50153589A (en:Method) * 1974-05-29 1975-12-10
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho
JPS5193174A (en:Method) * 1975-02-12 1976-08-16
JPS559480A (en) * 1978-07-07 1980-01-23 Nec Corp Large light output, lateral mode of semiconductor laser element
JPS59105394A (ja) * 1982-12-09 1984-06-18 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS6066891A (ja) * 1983-09-22 1985-04-17 Toshiba Corp 半導体レ−ザ装置
JPS6151770U (en:Method) * 1980-07-22 1986-04-07
JPS6173393A (ja) * 1984-09-14 1986-04-15 シーメンス、アクチエンゲゼルシヤフト 半導体ストライプレーザー
JP2012222296A (ja) * 2011-04-13 2012-11-12 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2371405B (en) * 2001-01-23 2003-10-15 Univ Glasgow Improvements in or relating to semiconductor lasers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363195A (en) * 1963-07-01 1968-01-09 Bell Telephone Labor Inc Junction diode maser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363195A (en) * 1963-07-01 1968-01-09 Bell Telephone Labor Inc Junction diode maser

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en:Method) * 1973-01-11 1974-09-06
JPS50153589A (en:Method) * 1974-05-29 1975-12-10
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho
JPS5193174A (en:Method) * 1975-02-12 1976-08-16
JPS559480A (en) * 1978-07-07 1980-01-23 Nec Corp Large light output, lateral mode of semiconductor laser element
JPS6151770U (en:Method) * 1980-07-22 1986-04-07
JPS59105394A (ja) * 1982-12-09 1984-06-18 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS6066891A (ja) * 1983-09-22 1985-04-17 Toshiba Corp 半導体レ−ザ装置
JPS6173393A (ja) * 1984-09-14 1986-04-15 シーメンス、アクチエンゲゼルシヤフト 半導体ストライプレーザー
JP2012222296A (ja) * 2011-04-13 2012-11-12 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ

Also Published As

Publication number Publication date
DE2337116A1 (de) 1974-02-14
JPS5624397B2 (en:Method) 1981-06-05

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