JPS4932589A - - Google Patents

Info

Publication number
JPS4932589A
JPS4932589A JP7362672A JP7362672A JPS4932589A JP S4932589 A JPS4932589 A JP S4932589A JP 7362672 A JP7362672 A JP 7362672A JP 7362672 A JP7362672 A JP 7362672A JP S4932589 A JPS4932589 A JP S4932589A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7362672A
Other languages
Japanese (ja)
Other versions
JPS5624397B2 (en, 2012
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7362672A priority Critical patent/JPS5624397B2/ja
Priority to DE19732337116 priority patent/DE2337116A1/de
Publication of JPS4932589A publication Critical patent/JPS4932589A/ja
Publication of JPS5624397B2 publication Critical patent/JPS5624397B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP7362672A 1972-07-21 1972-07-21 Expired JPS5624397B2 (en, 2012)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7362672A JPS5624397B2 (en, 2012) 1972-07-21 1972-07-21
DE19732337116 DE2337116A1 (de) 1972-07-21 1973-07-20 Halbleiterschichtlaser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7362672A JPS5624397B2 (en, 2012) 1972-07-21 1972-07-21

Publications (2)

Publication Number Publication Date
JPS4932589A true JPS4932589A (en, 2012) 1974-03-25
JPS5624397B2 JPS5624397B2 (en, 2012) 1981-06-05

Family

ID=13523701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7362672A Expired JPS5624397B2 (en, 2012) 1972-07-21 1972-07-21

Country Status (2)

Country Link
JP (1) JPS5624397B2 (en, 2012)
DE (1) DE2337116A1 (en, 2012)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en, 2012) * 1973-01-11 1974-09-06
JPS50153589A (en, 2012) * 1974-05-29 1975-12-10
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho
JPS5193174A (en, 2012) * 1975-02-12 1976-08-16
JPS559480A (en) * 1978-07-07 1980-01-23 Nec Corp Large light output, lateral mode of semiconductor laser element
JPS59105394A (ja) * 1982-12-09 1984-06-18 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS6066891A (ja) * 1983-09-22 1985-04-17 Toshiba Corp 半導体レ−ザ装置
JPS6151770U (en, 2012) * 1980-07-22 1986-04-07
JPS6173393A (ja) * 1984-09-14 1986-04-15 シーメンス、アクチエンゲゼルシヤフト 半導体ストライプレーザー
JP2012222296A (ja) * 2011-04-13 2012-11-12 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2371405B (en) * 2001-01-23 2003-10-15 Univ Glasgow Improvements in or relating to semiconductor lasers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363195A (en) * 1963-07-01 1968-01-09 Bell Telephone Labor Inc Junction diode maser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363195A (en) * 1963-07-01 1968-01-09 Bell Telephone Labor Inc Junction diode maser

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en, 2012) * 1973-01-11 1974-09-06
JPS50153589A (en, 2012) * 1974-05-29 1975-12-10
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho
JPS5193174A (en, 2012) * 1975-02-12 1976-08-16
JPS559480A (en) * 1978-07-07 1980-01-23 Nec Corp Large light output, lateral mode of semiconductor laser element
JPS6151770U (en, 2012) * 1980-07-22 1986-04-07
JPS59105394A (ja) * 1982-12-09 1984-06-18 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS6066891A (ja) * 1983-09-22 1985-04-17 Toshiba Corp 半導体レ−ザ装置
JPS6173393A (ja) * 1984-09-14 1986-04-15 シーメンス、アクチエンゲゼルシヤフト 半導体ストライプレーザー
JP2012222296A (ja) * 2011-04-13 2012-11-12 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ

Also Published As

Publication number Publication date
DE2337116A1 (de) 1974-02-14
JPS5624397B2 (en, 2012) 1981-06-05

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